2MHzto1.6GHz45dBRF-DetectingControllersandRFDetector

GeneralDescription TheMAX9930–MAX9933low-cost,low-powerlogarithmicamplifiersaredesignedtocontrolRFpoweramplifiers(PA)andtransimpedanceamplifiers(TIA),andtodetectRFpowerlevels.Thesedevicesaredesignedtooperateinthe2MHzto1.6GHzfrequencyrange. Features ♦

2MHzto1.6GHz45dBRF-DetectingControllersandRFDetector

文件：268.2 Kbytes Page：16 Pages

2MHzto1.6GHz45dBRF-DetectingControllersandRFDetector

文件：2.03299 Mbytes Page：16 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：管件 描述：IC RF DETECT 2MHZ-1.6GHZ 8UMAX RF/IF，射频/中频和 RFID 射频检测器

RS232/423LowCap,#24-7c,FPE,O/AFoilBraid,PVCJkt,CM

ProductDescription ComputerEIARS-232/423Cable,24AWGstranded(7x32)tinnedcopperconductors,Datalene®insulation,overallBeldfoil®(100coverage)+tinned copperbraidshield(65coverage),drainwire,PVCjacket.

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/15A,RDS(ON)=12mΩ(typ.)@VGS=10V RDS(ON)=17mΩ(typ.)@VGS=4.5V •P-Channel -20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=45mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •Reliable

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/15A,RDS(ON)=12mΩ(typ.)@VGS=10V RDS(ON)=17mΩ(typ.)@VGS=4.5V •P-Channel -20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=45mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •Reliable

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/9A, RDS(ON)=12mΩ(typ.)@VGS=4.5V RDS(ON)=18mΩ(typ.)@VGS=2.5V •P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=50mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFree

SimpleDriveRequirement,FullBridgeApplicationonLCDMonitorInverter

文件：99.35 Kbytes Page：7 Pages