位置：首页 > IC中文资料第12798页 > M5M51008CP
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M5M51008CP | 1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMITSUBISHI electlic 三菱电机 |  |   |
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMITSUBISHI electlic 三菱电机 | | | |
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMITSUBISHI electlic 三菱电机 | | | |
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMITSUBISHI electlic 三菱电机 | | | |
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMITSUBISHI electlic 三菱电机 | | | |
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T | MitsubishiMITSUBISHI electlic 三菱电机 | | | |
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMITSUBISHI electlic 三菱电机 | | | |
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMITSUBISHI electlic 三菱电机 | | | |
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMITSUBISHI electlic 三菱电机 | | |
M5M51008CP产品属性
- 类型
描述
- 型号
M5M51008CP
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISH |
23+ |
NA/ |
524 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MIT |
23+ |
DIP32 |
20000 |
全新原装假一赔十 |
|||
MITSUBISHI/三菱 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
TOSHIBA |
2020+ |
DIP |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
HIT |
23+ |
DIP32 |
20000 |
原厂原装正品现货 |
|||
MIT |
01+ |
DIP-32 |
119 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MIT |
23+ |
DIP/32 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
FSC |
DIP-32 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
MITSUBISH |
2022 |
DIP-32 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
MIT |
22+ |
DIP32 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
M5M51008CP芯片相关品牌
M5M51008CP规格书下载地址
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DdatasheetPDF页码索引
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