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位置：首页 > IC中文资料第6979页 > M5M5

型号 功能描述 生产厂家&企业 LOGO 操作
M5M5

SILICONGENERALPURPOSE5.0AMPDIODES

[EDAL]

EDAL

Edal Industries, Inc.

EDAL
M5M5

MEDIUMCURRENTSILICONRECTIFIERS

[EDAL]

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
M5M51008BFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BFP-10VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BFP-10VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BFP-12VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BFP-12VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BFP-15VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BFP-15VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BFP-70VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BFP-70VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKR-10VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKR-10VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKR-12VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKR-12VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKR-15VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKR-15VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKR-70VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKR-70VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKV-10VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKV-10VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKV-12VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKV-12VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKV-15VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKV-15VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKV-70VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BKV-70VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BRV-10VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BRV-10VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BRV-12VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BRV-12VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BRV-15VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BRV-15VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BRV-70VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BRV-70VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BVP-10VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BVP-10VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BVP-12VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BVP-12VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BVP-15VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BVP-15VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BVP-70VL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008BVP-70VLL

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CCP-55H

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CCP-55X

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CCP-70H

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CCP-70X

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CFP-55H

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CFP-55X

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CFP-70H

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CFP-70X

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CKR-55

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CKR-55H

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CKR-55X

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CKR-70

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CKR-70H

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CKR-70X

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
M5M51008CKV-55H

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

M5M5产品属性

  • 类型

    描述

  • 型号

    M5M5

  • 功能描述

    MEDIUM CURRENT SILICON RECTIFIERS

M5M5供应商更多...

更新时间：2024-4-30 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市杰顺创科技有限公司
M5M51008DFP-70HI
MITSUBISHI
21+
SOP-32
1880
原装现货库存
询价
深圳市凌旭科技有限公司
M5M5V408BTP-70HI
RENESAS
2016+
TSOP32
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
M5M5W816TP-70HI
MIT
23+
TSOP42
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
M5M5256CP-70LL
MITSUBISHI/三菱
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市晴轩时代电子有限公司
M5M5256BVP-70LL
MIT
21+
TSSOP
2000
原装现货。假一赔十
询价
深圳市科芯源微电子有限公司
M5M51008BFP-70L
MITSUBISHI/三菱
24+
SSOP-32
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市金芯世纪电子有限公司
M5M5256CFP-70LL
RENESAS/瑞萨
22+
SOP28
100000
代理渠道/只做原装/可含税
询价
深圳市科恒伟业电子有限公司
M5M5256DVP-55LL
RENESAS/瑞萨
22+
TSSOP
8500
只做原装正品假一赔十!正规渠道订货!
询价
深圳市华睿芯科技有限公司
M5M51008BVP-70LL
MITSUBISH
23+
SSOP16
20000
原厂原装正品现货
询价
中天科工半导体（深圳）有限公司
M5M5256CP-70LL
MITSUBISHI/三菱
20+
DIP28
67500
原装优势主营型号-可开原型号增税票
询价

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