位置：首页 > IC中文资料第11738页 > M59DR032A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR032A | 32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M59DR032A产品属性
- 类型
描述
- 型号
M59DR032A
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
18+ |
ICFLASH32MBIT100NS48TFBG |
6800 |
公司原装现货 |
|||
st |
1815+ |
fbga |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
S |
19+ |
BGA |
29600 |
绝对原装现货,价格优势! |
|||
ST |
2021+ |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
BGA |
68900 |
原包原标签100%进口原装常备现货! |
||||
STMicroelectronics |
21+ |
48-TFBGA(7x12) |
56200 |
一级代理/放心采购 |
|||
ST |
23+ |
BGA |
18000 |
||||
ST |
22+ |
48TFBGA (7x12) |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
N/A |
22+ |
8681 |
原装正品现货 可开增值税发票 |
|||
ST |
22+23+ |
BGA |
35947 |
绝对原装正品全新进口深圳现货 |
M59DR032A芯片相关品牌
M59DR032A规格书下载地址
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DdatasheetPDF页码索引
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