M29W160价格

参考价格:¥6.0120

型号:M29W160EB70N6E 品牌:MICRON 备注:这里有M29W160多少钱,2024年最近7天走势,今日出价,今日竞价,M29W160批发/采购报价,M29W160行情走势销售排行榜,M29W160报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M29W160

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W160产品属性

  • 类型

    描述

  • 型号

    M29W160

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

更新时间:2024-6-4 18:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
micron/镁光
23+
TSOP-48
7188
秉承只做原装 终端我们可以提供技术支持
ST
2004
75
原装正品长期供货,如假包赔包换 徐小姐13714450367
micron(镁光)
2021+
TSOP-48
499
DLZ
22+
TSOP
354000
MICRON/镁光
23+
TSOP48
3860
原厂原装
MICRON
21+
TSOP48
10080
公司只做原装,诚信经营
Micron
21+
48TSOP
13880
公司只售原装,支持实单
ST/意法
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ST/意法
23+
BGA
9980
原装正品,支持实单
MICORN
23+
TSOP48
20000
只做原装

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  • WEITRON

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