位置：首页 > IC中文资料第11734页 > M29F002T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F002T | 2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8,BootBlockSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29F002Bisa2Mbit(256Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F002B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Megabit(256Kx8-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29F002Familyconsistsof2Mbit,5.0volt-onlyFlashmemorydevicesorganizedas262,144bytes.TheAm29F002offerstheRESET#function,theAm29F002Ndoesnot.ThedataappearsonDQ7–DQ0.Thedeviceisofferedin32-pinPLCC,32-pinTSOP,and32-pinPDIPpackages.Th | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 |  | | |
2M(256KX8)BIT ■GENERALDESCRIPTION TheMBM29F002TC/BCisa2M-bit,5.0V-OnlyFlashmemoryorganizedas256Kbytesof8bitseach.TheMBM29F002TC/BCisofferedina32-pinTSOP(I)and32-pinPLCCpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0 | FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社 |  | | |
2Megabit(256Kx8-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29F002Familyconsistsof2Mbit,5.0volt-onlyFlashmemorydevicesorganizedas262,144bytes.TheAm29F002offerstheRESET#function,theAm29F002Ndoesnot.ThedataappearsonDQ7–DQ0.Thedeviceisofferedin32-pinPLCC,32-pinTSOP,and32-pinPDIPpackages.Th | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 | | | |
2Megabit(256Kx8-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29F002Familyconsistsof2Mbit,5.0volt-onlyFlashmemorydevicesorganizedas262,144bytes.TheAm29F002offerstheRESET#function,theAm29F002Ndoesnot.ThedataappearsonDQ7–DQ0.Thedeviceisofferedin32-pinPLCC,32-pinTSOP,and32-pinPDIPpackages.Th | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 | | |
M29F002T产品属性
- 类型
描述
- 型号
M29F002T
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
04+ |
PLCC32 |
4000 |
原装现货价格有优势量大可以发货 |
|||
ST |
22 |
PLCC32 |
25000 |
3月31原装,微信报价 |
|||
ST/STMicroelectronics/意法半导 |
21+ |
PLCC32 |
8 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
98+ |
DIP |
1139 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PMCFLASH |
0103+ |
PLCC |
1 |
||||
ST |
1922+ |
PLCC |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ST |
DIP32 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
PLCC32 |
899933 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST/意法 |
21+ |
PLCC32 |
5000 |
原装现货/假一赔十/支持第三方检验 |
|||
ST |
23+ |
PLCC32 |
9526 |
M29F002T芯片相关品牌
M29F002T规格书下载地址
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2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
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深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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