位置：首页 > IC中文资料第6562页 > M28W160ECT70N6U
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160ECT70N6U | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M28W160ECT70N6U | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 |  | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | |
M28W160ECT70N6U产品属性
- 类型
描述
- 型号
M28W160ECT70N6U
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
17+ |
46-TFBGA |
6200 |
100%原装正品现货 |
|||
ST |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST意法 |
21+ |
TFBGA46 |
3800 |
||||
ST |
20+ |
QFN |
20500 |
汽车电子原装主营-可开原型号增税票 |
|||
ST |
15+ |
BGA |
331 |
原装现货热卖!支持货到付款!可开增值税票! |
|||
ST/意法 |
TFBGA46 |
265209 |
假一罚十原包原标签常备现货! |
||||
ST |
22+ |
BGA |
32350 |
原装正品 假一罚十 公司现货 |
|||
ST |
04+ |
BGA |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
2016+ |
BGA |
6528 |
只做进口原装现货!或者订货,假一赔十! |
|||
ST/意法 |
2022 |
BGA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
M28W160ECT70N6U芯片相关品牌
M28W160ECT70N6U规格书下载地址
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M28W160ECT70N6U数据表相关新闻
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