位置：首页 > IC中文资料第6478页 > M28W160ECT100N6S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160ECT100N6S | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M28W160ECT100N6S | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 |  | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M28W160ECT100N6S产品属性
- 类型
描述
- 型号
M28W160ECT100N6S
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TSSOP |
9800 |
全新原装现货,假一赔十 |
|||
23+ |
N/A |
45780 |
正品授权货源可靠 |
||||
ST意法半导体 |
22+21+ |
TSSOP |
4800 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
ST |
2016+ |
BGA |
6528 |
只做进口原装现货!或者订货,假一赔十! |
|||
ST/意法 |
23+ |
TSSOP |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
15+ |
BGA |
331 |
原装现货热卖!支持货到付款!可开增值税票! |
|||
ST |
23+ |
BGA |
20000 |
原厂原装正品现货 |
|||
ST |
TSSOP48 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
05+ |
原厂原装 |
147 |
全新原装 绝对有货 |
M28W160ECT100N6S芯片相关品牌
M28W160ECT100N6S规格书下载地址
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