位置：首页 > IC中文资料第6480页 > M28W160ECB70ZB6S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160ECB70ZB6S | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M28W160ECB70ZB6S | 16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 |  | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | NUMONYXNUMONYX 恒忆 | | | |
16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W160ECisa16Mbit(1Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M28W160ECB70ZB6S产品属性
- 类型
描述
- 型号
M28W160ECB70ZB6S
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MRON/美光 |
23+ |
NA/ |
5743 |
原装现货,当天可交货,原型号开票 |
|||
ST |
04+ |
TSSOP |
6800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Numonyx |
2023+ |
TFBGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
ST |
TSSOP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
MICRON/美光 |
BGA |
265209 |
假一罚十原包原标签常备现货! |
||||
Micron |
17+ |
6200 |
|||||
Micron |
21+ |
46TFBGA (6.39x6.37) |
610880 |
本公司只售原装 支持实单 |
|||
Micron Technology Inc. |
21+ |
46-TFBGA |
9000 |
||||
Micron Technology Inc. |
24+ |
46-TFBGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
|||
Micron |
22+ |
SMD |
25000 |
只做原装进口现货,专注配单 |
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M28W160ECB70ZB6S数据表相关新闻
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