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位置：首页 > IC中文资料第6441页 > M28W160CB

M28W160CB价格

参考价格：￥8.2081

型号：M28W160CB70N6E 品牌：Micron 备注：这里有M28W160CB多少钱，2024年最近7天走势，今日出价，今日竞价，M28W160CB批发/采购报价，M28W160CB行情走势销售排行榜，M28W160CB报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M28W160CB

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N1

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N1

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N1E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N1E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N1F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N1F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N1S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N1S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N1U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N1U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N6

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N6

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N6E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N6E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N6F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N6F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N6S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N6S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N6T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100N6T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100N6U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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恒忆

NUMONYX
M28W160CB100N6U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB1

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100ZB1

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB1E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB1E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100ZB1F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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恒忆

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M28W160CB100ZB1F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB1S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB1S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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恒忆

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M28W160CB100ZB1U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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恒忆

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M28W160CB100ZB1U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB6

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB6

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100ZB6E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB6E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB100ZB6F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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恒忆

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M28W160CB100ZB6F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB6S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB6S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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恒忆

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M28W160CB100ZB6T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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恒忆

NUMONYX
M28W160CB100ZB6T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB6U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB100ZB6U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB70N1

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

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M28W160CB70N1

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB70N1E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB70N1E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

NUMONYX
M28W160CB70N1F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB70N1F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

NUMONYX
M28W160CB70N1S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

NUMONYX
M28W160CB70N1S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB70N1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M28W160CB70N1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

NUMONYX

M28W160CB产品属性

  • 类型

    描述

  • 型号

    M28W160CB

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

M28W160CB供应商更多...

更新时间：2024-5-10 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
M28W160CB70N6E
micron(镁光)
23+
标准封装
13048
全新原装正品/价格优惠/质量保障
询价
深圳市纳艾斯科技有限公司
M28W160CB70N6E
MICRON
2020+
TSOP48
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
中天科工半导体（深圳）有限公司
M28W160CB-100N6
ST
20+
TSSOP
35830
原装优势主营型号-可开原型号增税票
询价
深圳市恒达亿科技有限公司
M28W160CB-100N6
ST
23+
TSOP
4500
全新原装、诚信经营、公司现货销售!
询价
深圳赋能华科电子有限公司
M28W160CB100N1
ST
22+
TSOP
2960
诚信交易大量库存现货
询价
深圳市正迈科技有限公司
M28W160CB70N6L
ST
23+
SOP
20000
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全
询价
深圳市中赛美电子科技有限公司
M28W160CB70N6E
MICRON/美光
22+
NA
3000
支持任何机构检测 只做原装正品
询价
深圳市拓亿芯电子有限公司
M28W160CB70N6E
ST/Numony
23+
TSOP48
632
深圳市拓亿芯电子公司,全新原装现货
询价
深圳市科恒伟业电子有限公司
M28W160CB70N6E
MICRON/美光
22+
TSOP-48
9850
只做原装正品假一赔十!正规渠道订货!
询价
深圳市英科美电子有限公司
M28W160CB
ST
2021+
TSOP
1600
自家库存,百分之百原装
询价

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