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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28C16 | 16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M28C16产品属性
- 类型
描述
- 型号
M28C16
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
21+ |
TSSOP |
20 |
原装现货。假一赔十 |
|||
OKI |
23+ |
DIP24 |
20000 |
全新原装假一赔十 |
|||
OKI |
2020+ |
DIP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
OKI |
08+ |
DIP-24 |
357 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
OKI |
23+ |
SSOP48P |
18000 |
||||
OKI |
22+ |
DIP |
330 |
原装现货假一赔十 |
|||
ST意法半导体 |
22+21+ |
PLCC32 |
3000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
23+ |
N/A |
48700 |
正品授权货源可靠 |
||||
ST/意法 |
21+ |
PLCC32 |
5000 |
原装现货/假一赔十/支持第三方检验 |
|||
ST/意法 |
99+ |
PLCC32 |
880000 |
明嘉莱只做原装正品现货 |
M28C16芯片相关品牌
M28C16规格书下载地址
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2019-6-18
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