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M25PE40价格
参考价格：￥3.6029
型号：M25PE40-VMN6P 品牌：MICRON 备注：这里有M25PE40多少钱，2024年最近7天走势，今日出价，今日竞价，M25PE40批发/采购报价，M25PE40行情走势销售排行榜，M25PE40报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M25PE40 | 4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M25PE40 | 4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 |  | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbytealterability,50MHzSPIbus,standardpinout Description Theisa4Mbit(512Kb×8bit)SerialPagedFlashmemoryaccessedbyahighspeedSPIcompatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPageErasec | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
4Mbit,page-erasableserialFlashmemorywithbytealterability,75MHzSPIbus,standardpinout Description TheM25PE40isa4Mbit(512Kbit×8bit)serialpagedFlashmemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated | NUMONYXNUMONYX 恒忆 | | | |
封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：散装 描述：IC FLASH 4MBIT SPI 75MHZ 8SO W 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  | | |
封装/外壳：8-VDFN 裸露焊盘 包装：管件 描述：IC FLASH 4MBIT SPI 75MHZ 8MLP 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
4-MbitDataFlash-LPageEraseSerialFlashMemory Features Single1.65V-3.6Vsupply SerialPeripheralInterface(SPI)compatible SupportsSPImodes0and3 SupportsRapidS™operation Continuousreadcapabilitythroughentirearray Upto85MHz Low-powerreadoptionupto15MHz Clock-to-outputtime(tV )of6nsmaximum | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
4-MbitDataFlash-LPageEraseSerialFlashMemory 文件：1.18811 Mbytes Page：63 Pages | Dialog Dialog |  | | |
4-MbitDataFlash-LPageEraseSerialFlashMemory 文件：1.18811 Mbytes Page：63 Pages | Dialog Dialog | | | |
4-MbitDataFlash-LPageEraseSerialFlashMemory 文件：1.18811 Mbytes Page：63 Pages | Dialog Dialog | | | |
4-MbitDataFlash-LPageEraseSerialFlashMemory 文件：1.18811 Mbytes Page：63 Pages | Dialog Dialog | | |
M25PE40产品属性
- 类型
描述
- 型号
M25PE40
- 制造商
Micron Technology Inc
- 功能描述
SERIAL NOR - Trays
- 制造商
Micron Technology Inc
- 功能描述
IC FLASH 4MBIT 75MHZ 8SO
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
21+ |
SOP8 |
10000 |
原装现货。假一赔十 |
|||
ST |
2016+ |
SOP8 |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
MICRON/美光 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
MICRON |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
micron(镁光) |
23+ |
标准封装 |
15048 |
全新原装正品/价格优惠/质量保障 |
|||
MICRON/美光 |
23+ |
SOP-8 |
20000 |
热卖优势现货 |
|||
MICRON/美光 |
20+ |
SOP8 |
880000 |
明嘉莱只做原装正品现货 |
|||
MRON/美光 |
23+ |
NA/ |
692 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
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2019-2-28
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