P-ChannelEnhancementModePowerMOSFET

Description The4807usesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures VDS=-30V,ID=-6.0A RDS(ON)

DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4807usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO4807isPb-free(meetsROHS&Sony259specifications).AO4807LisaGreenPr

DualP-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-6A(VGS=-10V) ●RDS(ON)

DualP-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

100/1000BaseTGigabitDualPortTransformer

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