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位置：首页 > IC中文资料第5581页 > K6R4016C1D

型号 功能描述 生产厂家&企业 LOGO 操作
K6R4016C1D

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D

1Mx4BitHighSpeedStaticRAM(3.3VOperating).OperatedatCommercialandIndustrialTemperatureRanges

文件：218.74 Kbytes Page：9 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EC8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EI0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EI10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EI8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EL0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EL10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EL8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EP0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EP10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-EP8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JC8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JI0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JI10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JI8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JL0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JL10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JL8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JP0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JP10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-JP8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KC8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KI0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KI10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KI8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KL0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KL10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KL8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KP0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KP10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-KP8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TC8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TI0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TI10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TI8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TL0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TL10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TL8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TP0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TP10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-TP8

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-UC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung
K6R4016C1D-UC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung Group

三星三星半导体

Samsung

K6R4016C1D产品属性

  • 类型

    描述

  • 型号

    K6R4016C1D

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

K6R4016C1D供应商更多...

更新时间：2024-5-13 22:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
上海意淼电子科技有限公司
K6R4016C1DUI10
N/A
23+
NA
20000
全新原装假一赔十
询价
中天科工半导体（深圳）有限公司
K6R4016C1D-JI10
SAMSUNG/三星
20+
SOJ
35830
原装优势主营型号-可开原型号增税票
询价
深圳市威雅利发展有限公司
K6R4016C1D-UI10
SAMSUNG
16+
TSOP44
8850
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市华睿芯科技有限公司
K6R4016C1D-JC10
SAMSUNG
23+
SOJ
20000
原厂原装正品现货
询价
深圳市佳杰伟业科技有限公司
K6R4016C1D-JC10000
SAMSUNG
2310+
SOP
3260
优势代理渠道,原装现货,可全系列订货
询价
鑫勃源（上海北京 青岛）有限公司
K6R4016C1D-UC10
SAMSUNG
23+
标准封装
18000
询价
深圳市科恒伟业电子有限公司
K6R4016C1D-UI10
Samsung
2016+
TSOP
6528
只做进口原装现货!或订货,假一赔十!
询价
深圳市凌旭科技有限公司
K6R4016C1D-KI10
SAMSUNG/三星
21+
SOJ44
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
深圳市宝芯创电子有限公司
K6R4016C1D-UI10
SAMSUNG/三星
1016+
TSOP44
15242
只做原厂原装,认准宝芯创配单专家
询价
深圳市大联智电子有限公司
K6R4016C1D-UI10
SAMSUNG/三星
22+
TSOP44
354000
询价

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