型号 功能描述 生产厂家&企业 LOGO 操作
K4S56163PF

4Mx16Bitx4BanksMobileSDRAMin54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54FBGA

GENERALDESCRIPTION TheK4S56163PFis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactions

SamsungSamsung Group

三星三星半导体

Samsung

16Mx16MobileSDRAM54CSP

文件:60.47 Kbytes Page:8 Pages

SamsungSamsung Group

三星三星半导体

Samsung

16Mx16MobileSDRAM54CSP

文件:60.47 Kbytes Page:8 Pages

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54BOC

文件:114.55 Kbytes Page:12 Pages

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54BOC

文件:114.55 Kbytes Page:12 Pages

SamsungSamsung Group

三星三星半导体

Samsung

4Mx16Bitx4BanksMobileSDRAMin54BOC

文件:114.55 Kbytes Page:12 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4S56163PF产品属性

  • 类型

    描述

  • 型号

    K4S56163PF

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

更新时间:2024-5-11 12:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAM
1535+
640
SAMSUNG
2339+
BGA
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
SAMSUNG/三星
19+
BGA
11750
进口原装现货
SEC
23+
FBGA
8560
受权代理!全新原装现货特价热卖!
SEC
21+
FBGA
58
优势代理渠道,原装正品,可全系列订货开增值税票
SAMSUNG
2021+
BGA
6797
原装正品假一罚十
23+
N/A
85100
正品授权货源可靠
SAMSUNG/三星
20+
BGA
67500
原装优势主营型号-可开原型号增税票
SAM
23+
BGA
5000
原装正品,假一罚十
SAMSUNG/三星
21+
BGA
6688
十年老店,原装正品

K4S56163PF芯片相关品牌

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