型号 功能描述 生产厂家&企业 LOGO 操作
K4E660412E

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung

16Mx4bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung

K4E660412E产品属性

  • 类型

    描述

  • 型号

    K4E660412E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    16M x 4bit CMOS Dynamic RAM with Extended Data Out

更新时间:2024-5-15 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
23+
NA
3230
航宇科工半导体-中国航天科工集团战略合作伙伴!
SAMSUNG
2023+
TSOP32
700000
柒号芯城跟原厂的距离只有0.07公分
SAMSUNG
21+
TSOP32
50000
全新原装正品现货,支持订货
SAMSUNG
6000
面议
19
TSOP
23+
N/A
85400
正品授权货源可靠
SAMSUNG/三星
21+
TSOP32
11600
优势代理渠道,原装正品,可全系列订货开增值税票
SAMSUNG/三星
23+
NA/
3730
原装现货,当天可交货,原型号开票
SANSUM
2020+
TSOP
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
SAMSUNG/三星
TSOP50
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SAMSANG
19+
TSOP
256800
原厂代理渠道,每一颗芯片都可追溯原厂;

K4E660412E芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

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