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IXYH50N120C3D1价格
参考价格：￥27.6507
型号：IXYH50N120C3D1 品牌：IXYS 备注：这里有IXYH50N120C3D1多少钱，2024年最近7天走势，今日出价，今日竞价，IXYH50N120C3D1批发/采购报价，IXYH50N120C3D1行情走势销售排行榜，IXYH50N120C3D1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXYH50N120C3D1 | High-SpeedIGBTfor20-50kHzSwitching 文件：186.5 Kbytes Page：7 Pages | IXYS IXYS Integrated Circuits Division |  |   |
IXYH50N120C3D1 | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 90A 625W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | |
1200VXPTTMIGBTGenX3TMw/Diode High-SpeedIGBT for20-50kHzSwitching Features •SiliconChiponDirect-CopperBond (DCB)Substrate •IsolatedMountingSurface •2500V~ElectricalIsolation •OptimizedforLowSwitchingLosses •SquareRBSOA •PositiveThermalCoefficientof Vce(sat) •Anti-ParallelUltraFast | IXYS IXYS Integrated Circuits Division | | |
IXYH50N120C3D1产品属性
- 类型
描述
- 型号
IXYH50N120C3D1
- 功能描述
IGBT 晶体管 XPT 1200V IGBT GenX6 XPT IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-247 |
10000 |
全新、原装 |
|||
Littelfuse/IXYS |
新批次 |
TO-247 |
4500 |
||||
Littelfuse/IXYS |
23+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IXYS |
22+ |
IGBT |
210 |
原厂原装,价格优势!13246658303 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/Littelfuse |
23+ |
TO-247 |
900 |
只做原装提供一站式配套供货中利达 |
|||
IXYS |
23+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS |
20+ |
TO-247 |
438 |
全新原装亏本出13157115792 |
|||
IXYS/艾赛斯 |
21+ROHS |
IXYH50N120C3D1 |
10133 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
LITTELFUSE |
23+ |
TO-247AD |
30 |
只做原装 |
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IXYH50N120C3D1规格书下载地址
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IXYH50N120C3D1数据表相关新闻
IXXYS MOS 二极管 IGBT IC 元器件 IXYS DIODE FRED Single MOS
IGBT模块.IGBT驱动板.IPM模块.GTR模块.IGBT单管.可控硅.晶闸管.整流模块.熔断器.二极管.电容.无感电容.变频器.伺服电机.伺服驱动器.
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DdatasheetPDF页码索引
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