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IXTY01N100D价格
参考价格：￥7.1344
型号：IXTY01N100D 品牌：IXYS 备注：这里有IXTY01N100D多少钱，2024年最近7天走势，今日出价，今日竞价，IXTY01N100D批发/采购报价，IXTY01N100D行情走势销售排行榜，IXTY01N100D报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTY01N100D | N-Channel,DepletionModeHighVoltageMOSFET HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Integrated Circuits Division |  |   |
IXTY01N100D | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IXTY01N100D | PowerMOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
PowerMOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | | |
HighVoltageMOSFET HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Integrated Circuits Division | | | |
N-Channel,DepletionModeHighVoltageMOSFET HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Integrated Circuits Division | | | |
HighVoltageMOSFET HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Integrated Circuits Division | | | |
HighVoltageMOSFETN-Channel,EnhancementMode HighVoltageMOSFET N-Channel,EnhancementMode Features •InternationalstandardpackagesJEDECTO-251AA,TO-252AA •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Levelshifting •Triggers •Solidstaterelays •Currentre | IXYS IXYS Integrated Circuits Division | | | |
PowerMOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
IXTY01N100D产品属性
- 类型
描述
- 型号
IXTY01N100D
- 功能描述
MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-252 |
724 |
原厂直供,支持账期,免费供样,技术支持 |
|||
IXYS |
21+ |
TO-252 |
35200 |
一级代理/放心采购 |
|||
IXYS |
23+ |
TO-252 |
11516 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
IXYS |
22+23+ |
TO-252 |
28372 |
绝对原装正品全新进口深圳现货 |
|||
IXYS/艾赛斯 |
2024+实力库存 |
TO-252 |
19000 |
只做原厂渠道 可追溯货源 |
|||
IXYS/艾赛斯 |
TO-252 |
501565 |
16余年资质 绝对原盒原盘 更多数量 |
||||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-252-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
23+ |
SMD |
68294 |
原装正品实单可谈 库存现货 |
|||
IXYS |
23+ |
TO-252AA |
12300 |
全新原装真实库存含13点增值税票! |
|||
IXYS |
12+ |
TO-252 |
180 |
全新原装 实单必成 |
IXTY01N100D芯片相关品牌
IXTY01N100D规格书下载地址
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IXTY01N100D数据表相关新闻
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DdatasheetPDF页码索引
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