位置：首页 > IC中文资料第5995页 > IXTU01N80
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTU01N80 | HighVoltageMOSFET HighVoltageMOSFET N-Channel,EnhancementMode Features •InternationalstandardpackagesJEDECTO-251AA,TO-252AA •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Levelshifting •Triggers •Solidstaterelays •Currentre | IXYS IXYS Integrated Circuits Division |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Plastic-EncapsulateMOSFETS 文件：710.08 Kbytes Page：3 Pages | ZPSEMI ZP Semiconductor |  | | |
N-ChannelPowerMOSFET 文件：796.82 Kbytes Page：5 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
Plastic-EncapsulateMOSFETS 文件：546.31 Kbytes Page：2 Pages | ZPSEMI ZP Semiconductor | | |
IXTU01N80产品属性
- 类型
描述
- 型号
IXTU01N80
- 功能描述
MOSFET 0.1 Amps 800V 50 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
1822+ |
TO-251 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
apec |
2023+ |
TO-251 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
IXYS |
21+ |
TO2513 Short Leads IPak TO251A |
13880 |
公司只售原装,支持实单 |
|||
I |
23+ |
TO-251AA |
6000 |
原装正品，支持实单 |
|||
IXYS |
23+ |
SMD |
67075 |
原装正品实单可谈 库存现货 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-251-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VBSEMI |
19+ |
TO-251 |
29600 |
绝对原装现货,价格优势! |
|||
IXYS |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IXYS |
23+ |
TO-251AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
IXTU01N80芯片相关品牌
IXTU01N80规格书下载地址
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IXTU01N80数据表相关新闻
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DdatasheetPDF页码索引
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