位置：首页 > IC中文资料第5217页 > IXTT52N30P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTT52N30P | PolarHTPowerMOSFET Polar™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Switch-ModeandResonant-ModePowerSuppli | IXYS IXYS Integrated Circuits Division |  |   |
IXTT52N30P | N-ChannelEnhancementModePowerMOSFETs 文件：146.19 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
N-ChannelEnhancementModePowerMOSFETs 文件：146.19 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PolarHTPowerMOSFETHiPerFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | | | |
PolarHTTMHiPerFETPowerMOSFET 文件：97.5 Kbytes Page：5 Pages | IXYS IXYS Integrated Circuits Division | | | |
PowerMOSFETs 文件：195.18 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
IXTT52N30P产品属性
- 类型
描述
- 型号
IXTT52N30P
- 功能描述
MOSFET 52 Amps 300V 0.066 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-268AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS |
23+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
|||
IXYS/艾赛斯 |
23+ |
TO-268 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-268 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
|||
IXYS |
08+(pbfree) |
TO-268 |
8866 |
||||
IXYS |
23+ |
TO-268 |
8000 |
只做原装现货 |
|||
IXYS/艾赛斯 |
21+ROHS |
TO-268 |
75322 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS/艾赛斯 |
23+ |
TO-268 |
10000 |
公司只做原装正品 |
IXTT52N30P芯片相关品牌
IXTT52N30P规格书下载地址
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IXTT52N30P数据表相关新闻
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DdatasheetPDF页码索引
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