位置：首页 > IC中文资料第1848页 > IXTP1R4N120P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTP1R4N120P | N-ChannelEnhancementMode 文件：130.71 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division |  |   |
IXTP1R4N120P | N-ChannelEnhancementModeAvalancheRated 文件：309.99 Kbytes Page：5 Pages | IXYS IXYS Integrated Circuits Division | | |
IXTP1R4N120P | N-ChannelEnhancementModePowerMOSFET 文件：368.72 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
N-ChannelEnhancementModePowerMOSFET 文件：368.72 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | | |
N-ChannelEnhancementModeAvalancheRated 文件：309.99 Kbytes Page：5 Pages | IXYS IXYS Integrated Circuits Division | | | |
N-ChannelEnhancementMode 文件：130.71 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
IXTP1R4N120P产品属性
- 类型
描述
- 型号
IXTP1R4N120P
- 功能描述
MOSFET 1.4 Amps 1200V 15 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
2020+ |
TO-252 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IXYS/艾赛斯 |
TO-252 |
501563 |
16余年资质 绝对原盒原盘 更多数量 |
||||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-220-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
|||
IXYS |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IXYS |
07+/08+ |
TO-220 |
351 |
||||
IXYS |
24+ |
TO-220-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS/艾赛斯 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
I |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
IXYS |
23+ |
TO-252 |
26000 |
专业优势供应 |
IXTP1R4N120P芯片相关品牌
IXTP1R4N120P规格书下载地址
IXTP1R4N120P参数引脚图相关
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IXTP1R4N120P数据表相关新闻
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2018-12-28
DdatasheetPDF页码索引
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