位置：首页 > IC中文资料第6657页 > IXFK24N100F
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFK24N100F | HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications • | IXYS IXYS Integrated Circuits Division |  |   |
IXFK24N100F | HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance | IXYS IXYS Integrated Circuits Division | | |
IXFK24N100F | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications • | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETTMPowerMOSFETs 文件：137.63 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | | |
SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •FastintrinsicRectifier Applications •DC-DCconverters •Batte | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features •HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode •ISOPLUSI4-PAC™highvoltagepackage -isolatedbacksurface -enlargedcree | IXYS IXYS Integrated Circuits Division | | |
IXFK24N100F产品属性
- 类型
描述
- 型号
IXFK24N100F
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO264AA |
6000 |
诚信服务，绝对原装原盘 |
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IXYS |
18+ |
NA |
3032 |
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IXYS/艾赛斯 |
24+ |
to264 |
58000 |
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IXYS |
21+ |
TO2643 TO264AA |
13880 |
公司只售原装,支持实单 |
|||
IXYS |
22+ |
TO2643 TO264AA |
9000 |
原厂渠道,现货配单 |
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IXYS |
22+ |
NA |
93 |
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IXYS |
1931+ |
N/A |
93 |
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IXYS/艾赛斯 |
23+ |
TO-264 |
325680 |
原装正品 华强现货 |
|||
IXYS/艾赛斯 |
23+ |
TO-264 |
6000 |
原装正品，支持实单 |
|||
Littelfuse/IXYS |
23+ |
TO264 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
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IXFK24N100F规格书下载地址
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IXFK24N100F数据表相关新闻
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DdatasheetPDF页码索引
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