位置：首页 > IC中文资料第6732页 > IXFH28N50
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFH28N50 | HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance- | IXYS IXYS Integrated Circuits Division |  |   |
HiPerRFPowerMOSFETs HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance- | IXYS IXYS Integrated Circuits Division | | | |
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance- | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedIn | IXYS IXYS Integrated Circuits Division | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
28A500VN-channelenhancedfieldeffecttransistor 文件：932.83 Kbytes Page：5 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | | |
28A竊?00VN-CHANNELMOSFET 文件：347.24 Kbytes Page：5 Pages | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：322.88 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFET500V,28A,0.155廓 文件：688.43 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
IXFH28N50产品属性
- 类型
描述
- 型号
IXFH28N50
- 制造商
IXYS
- 制造商全称
IXYS Corporation
- 功能描述
HiPerRF Power MOSFETs
- F-Class
MegaHertz Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
2023+ |
TO-247 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
IXYS/艾赛斯 |
23+ |
NA/ |
8675 |
原装现货,当天可交货,原型号开票 |
|||
IXYS |
20+ |
247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
18+ |
TO-247 |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
IXYS/艾赛斯 |
2022 |
TO-247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IXYS/艾赛斯 |
TO-247 |
265209 |
假一罚十原包原标签常备现货! |
||||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
37850 |
21+ROHS |
10 |
38097 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VBSEMI |
19+ |
TO-247AD |
29600 |
绝对原装现货,价格优势! |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
IXFH28N50芯片相关品牌
IXFH28N50规格书下载地址
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代理渠道供应全新原装IXFH34N65X2-IXYS场效应管
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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