ISL9012价格

参考价格:¥8.0619

型号:ISL9012IRCJZ 品牌:Intersil 备注:这里有ISL9012多少钱,2024年最近7天走势,今日出价,今日竞价,ISL9012批发/采购报价,ISL9012行情走势销售排行榜,ISL9012报价。
型号 功能描述 生产厂家&企业 LOGO 操作
ISL9012

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
ISL9012

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
ISL9012

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
ISL9012

Providinghigh-performancesolutionsforeverylinkinthesignalchain

文件:9.95425 Mbytes Page:44 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
ISL9012

DualLDOwithLowNoise,LowIQ,andHighPSRR

文件:235 Kbytes Page:11 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromchannel1and300mAfromchannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Feature

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9012isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1,and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Featu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9012isahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1,and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. ThedeviceintegratesaPower-On-Reset(POR)func

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

ISL9012产品属性

  • 类型

    描述

  • 型号

    ISL9012

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    Dual LDO with Low Noise, Low IQ, and High PSRR

更新时间:2024-5-1 18:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
23+
DFN10(3x3)
6000
INTERSIL
MLF-10
68900
原包原标签100%进口原装常备现货!
Renesas Electronics America In
23+
10-VFDFN
3800
特惠实单价格秒出原装正品假一罚万
RENESAS-瑞萨.
24+25+/26+27+
DFN-10
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
Renesas Electronics America In
22+/23+
10-DFN(3x3)
7500
原装进口公司现货假一赔百
Intersil
07+/08+
10-DFN
7500
RENESAS/瑞萨
23+
DFN-10
60000
全新、原装
Intersil
23+
10-DFN
3361
原装现货
Intersil(英特矽尔)
18+
9800
代理进口原装/实单价格可谈
RENESAS(瑞萨电子)
22+
NA
500000
万三科技,秉承原装,购芯无忧

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