位置：首页 > IC中文资料第5565页 > ISL9000
ISL9000价格
参考价格：￥8.0619
型号：ISL9000AIRCCZ 品牌：Intersil 备注：这里有ISL9000多少钱，2024年最近7天走势，今日出价，今日竞价，ISL9000批发/采购报价，ISL9000行情走势销售排行榜，ISL9000报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
ISL9000 | DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
ISL9000 | DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
ISL9000产品属性
- 类型
描述
- 型号
ISL9000
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Dual LDO with Low Noise, Very High PSRR, and Low IQ
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
2021+ |
N/A |
6800 |
只有原装正品 |
|||
INTER |
2020+ |
SOT23-5 |
16800 |
绝对原装进口现货,假一赔十,价格优势! |
|||
INTERSIL |
22+ |
QFN-10 |
8000 |
原装正品支持实单 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
QFN |
23+ |
INTERSI |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ADI |
2022+ |
SOP-8 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
XICOR |
23+ |
DFN10(3x3) |
6000 |
||||
INTERSIL |
2023+ |
QFN |
50000 |
原装现货 |
|||
INTERSIL |
06+ |
QFN-10 |
12050 |
全新原装 实单必成 |
|||
INTERSIL |
2022+ |
DFN-10 |
20000 |
只做原装进口现货.假一罚十 |
ISL9000芯片相关品牌
ISL9000规格书下载地址
ISL9000参数引脚图相关
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- ISL9112
- ISL9111
- ISL9110
- ISL9109
- ISL9108
- ISL9107
- ISL9106
- ISL9105
- ISL9104
- ISL9103
- ISL9021
- ISL9016
- ISL9014AIRFCZ
- ISL9014
- ISL9012IRNNZ
- ISL9012IRMNZ
- ISL9012IRJRZ
- ISL9012IRFJZ
- ISL9012IRCJZ
- ISL9012
- ISL9011AIRBBZ
- ISL9011
- ISL9008AIENZ-T
- ISL9008AIECZ-T
- ISL9008
- ISL9007
- ISL9005
- ISL9003AIRUBZ-T
- ISL9003AIENZ-T
- ISL9003AIEJZ-T
- ISL9003AIEFZ-T
- ISL9003AIEBZ-T
- ISL9003
- ISL9001AIRNZ-T
- ISL9001AIRCZ-T
- ISL9001
- ISL9000IRMMZ
- ISL9000AIRNNZ
- ISL9000AIRNFZ
- ISL9000AIRCCZ
- ISL89412IBZ
- ISL89411IBZ
- ISL89410IPZ
- ISL89410IBZ
- ISL89401AR3Z
- ISL89400ABZ
- ISL89367FRTAZ
- ISL89167FBEAZ
- ISL89166FBEAZ
- ISL89165FRTCZ
- ISL89165FRTAZ
- ISL89165FBECZ
- ISL89165FBEBZ
- ISL89164FRTBZ
- ISL89164FBECZ
- ISL89164FBEBZ
- ISL89164FBEAZ
- ISL89163FRTCZ
- ISL89163FRTBZ
- ISL89163FRTAZ-T
- ISL8843
- ISL8724
- ISL8723
- ISL8702
- ISL8701
- ISL8700
- ISL8601
- ISL8563
- ISL8560
- ISL8540
- ISL8510
- ISL8502
- ISL8501
- ISL8500
- ISL8499
- ISL8491
- ISL8490
- ISL848X
- ISL8489
- ISL8488
ISL9000数据表相关新闻
ISL9204IRZ-T
ISL9204IRZ-T
2022-8-9ISL88739HRZIntersil(英特矽尔)电池管理芯片
ISL88739HRZ Intersil(英特矽尔) 电池管理芯片
2022-4-18ISL88694IH5Z-TK
ISL88694IH5Z-TK
2021-11-11ISL9220IRTZ-T7A 现货热卖！！！！ 假一赔万，欢迎来电18916952726
ISL9220IRTZ-T7A现货热卖！！！！假一赔万，欢迎来电18916952726
2021-7-7ISL9237HRZ-T
ISL9237HRZ-T
2021-6-11ISL88706IB826Z，ISL88706IB829Z，ISL88706IB831Z，ISL88706IB844Z
ISL88706IB826Z，ISL88706IB829Z，ISL88706IB831Z，ISL88706IB844Z
2020-3-11
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
