型号 功能描述 生产厂家&企业 LOGO 操作
IRGPC40

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT STD 600V 50A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT UFAST 600V 40A TO-247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRGPC40产品属性

  • 类型

    描述

  • 型号

    IRGPC40

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

更新时间:2024-4-26 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
NA/
17138
原装现货,当天可交货,原型号开票
IR
20+
TO-247
17
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+
TO247
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
IR
23+
原厂封装
9888
专做原装正品,假一罚百!
IR
23+
原厂原装
6000
全新原装
IR
22+
TO-3P
4500
全新原装品牌专营
IR
23+
管3P
18000
IR
2023+
TO-3P
6893
专注全新正品,优势现货供应
IR
2048+
TO-247
9851
只做原装正品现货!或订货假一赔十!
IR
22+23+
TO-247
16459
绝对原装正品全新进口深圳现货

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  • MSYSTEM
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