位置：首页 > IC中文资料 > IRGB15B60KDTRRPBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
ULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
16+/17+ |
TO-220 |
3500 |
原装正品现货供应56 |
|||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
|||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
IR |
21+ |
TO-220 |
6000 |
原装正品 |
|||
IR/VISHAY |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
IR |
TO-220AB |
6000 |
原装现货,长期供应,终端可账期 |
||||
IR |
2022+ |
TO-220AB |
12888 |
原厂代理 终端免费提供样品 |
|||
IR |
23+ |
TO-220 |
8000 |
原装正品 |
|||
IR |
21+ |
TO-220 |
56000 |
公司进口原装现货 批量特价支持 |
|||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
IRGB15B60KDTRRPBF芯片相关品牌
IRGB15B60KDTRRPBF规格书下载地址
IRGB15B60KDTRRPBF参数引脚图相关
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IRGB15B60KDTRRPBF数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
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原装正品现货热卖中，焕盛达-专注原装用芯服务；
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2019-5-8
DdatasheetPDF页码索引
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