位置：首页 > IC中文资料 > IRG4BC10SDS
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
ShortCircuitRatedUltraFastIGBT ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Bene | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.2.39V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Highshortcircuitratingoptimizedformotorcontrol 文件：274.8 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
22+23+ |
TO-220 |
28692 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
TO-220 |
360000 |
进口原装房间现货实库实数 |
|||
Infineon Technologies |
23+ |
TO220AB |
9000 |
原装正品，支持实单 |
|||
IR |
1923+ |
TO-220 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
IR |
08+(pbfree) |
TO-220-3 |
8866 |
||||
IR |
05+ |
原厂原装 |
951 |
只做全新原装真实现货供应 |
|||
Infineon Technologies |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IR |
2020+ |
TO-220AB |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
IRG4BC10SDS芯片相关品牌
IRG4BC10SDS规格书下载地址
IRG4BC10SDS参数引脚图相关
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IRG4BC10SDS数据表相关新闻
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2021-8-10IRG4PC50WPBF
属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
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元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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