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IRG4BC价格
参考价格：￥6.7890
型号：IRG4BC10KDPBF 品牌：International 备注：这里有IRG4BC多少钱，2024年最近7天走势，今日出价，今日竞价，IRG4BC批发/采购报价，IRG4BC行情走势销售排行榜，IRG4BC报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Short Circuit Rated UltraFast IGBT ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Bene | IRF International Rectifier |  |   | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) Features •Extremelylowvoltagedrop;1.1Vtypicalat2A •S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives,upto2KHzinChopperApplications •VeryTightVce(on)distribution •IndustrystandardTO-220ABpackage Benef | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE StandardSpeedCoPackIGBT Features •Extremelylowvoltagedrop1.1Vtyp.@2A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-so | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE StandardSpeedCoPackIGBT Features •Extremelylowvoltagedrop1.1Vtyp.@2A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-so | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features •Extremelylowvoltagedrop;1.1Vtypicalat2A •S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives,upto2KHzinChopperApplications •VeryTightVce(on)distribution •IndustrystandardTO-220ABpackage • | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighoperating upto80kHzinhardswitching,>200kHzin resonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousGeneration •IGBTco-packagedwith | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A) Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTco-packagedwithultra-soft-recoveryanti-paralleldiodes •IndustrystandardTO-220ABpackage Benefits •BestValueforApplianceandIndustrialapplications •Offershighesteffic | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTco-packagedwithultra-soft-recoveryanti-paralleldiodes •IndustrystandardTO-220ABpackage •Lead-Free Benefits •BestValueforApplianceandIndustrialapplications •Offers | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) Features •UltraFast:Optimizedforhighfrequenciesfrom10to30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage Benefits •BestValueforApplianceandIndustrialApplications •HighnoiseimmunePositiveOnlygated | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages Benefits •BestValueforApplianceandIndustrialApplications | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardTO-220ABpackage •Lead-Free Benefits •BestValueforApplianceandIndustrialApplications •Highnoiseimmune | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages Benefits •BestValueforApplianceandIndustrialApplications | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Genera | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features •Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery | IRF International Rectifier | | | |
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE
| IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage •Lead-Free Benef | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhi | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •ShortCircuitRatedUltraFast:Optimizedfor highoperatingfrequencies>5.0kHz,andShort CircuitRatedto10μs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXF | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMul | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRF International Rectifier | | | |
Short Circuit Rated UltraFast IGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgenerations • | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforinterme | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermed | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardD2Pakpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardD2Pakpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) Features •Extremelylowvoltagedrop1.4Vtyp.@10A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-para | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Extremelylowvoltagedrop1.4Vtyp.@10A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-paralleldio | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Gener | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDultrafast, ultra-s | IRF International Rectifier | | | |
UltraFast CoPack IGBT Features •UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFRED®ultrafast,ultra-soft-recoveryanti-pa | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGenera | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGenera | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterpara- meterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | | | |
UltraFast Speed IGBT Features •UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generati | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff | IRF International Rectifier | | |
IRG4BC产品属性
- 类型
描述
- 型号
IRG4BC
- 功能描述
IGBT UFAST 600V 9.0A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3358 |
原装现货,当天可交货,原型号开票 |
|||
IR |
2018+ |
TO220 |
6528 |
承若只做进口原装正品假一赔十! |
|||
IR |
12 |
TO-220 |
49 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
22+ |
TO-220 |
4500 |
全新原装品牌专营 |
|||
IR |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
ir |
23+ |
NA |
4111 |
专做原装正品,假一罚百! |
|||
IR |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IR |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
|||
IR |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
IRG4BC芯片相关品牌
IRG4BC规格书下载地址
IRG4BC参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4BC30FD1PBF
- IRG4BC20UPBF
- IRG4BC20UDSTRRP
- IRG4BC20UD-SPBF
- IRG4BC20UDPBF
- IRG4BC20SPBF
- IRG4BC20SD-SPBF
- IRG4BC20SDPBF
- IRG4BC20MDPBF
- IRG4BC20KDSTRLP
- IRG4BC20KD-SPBF
- IRG4BC20KDPBF
- IRG4BC20FPBF
- IRG4BC20FDPBF
- IRG4BC15UD-SPBF
- IRG4BC15UDPBF
- IRG4BC15UD-LPBF
- IRG4BC10UDPBF
- IRG4BC10KPBF
- IRG4BC10KDPBF
- IRFZ48ZSPBF
- IRFZ48Z
- IRFZ48VSPBF
- IRFZ48VPBF
- IRFZ48V
- IRFZ48SPBF
- IRFZ48S
- IRFZ48RSPBF
- IRFZ48RPBF
- IRFZ48R
- IRFZ48PBF
- IRFZ48NSTRLPBF
- IRFZ48NSPBF
- IRFZ48NPBF
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46ZSTRLPBF
- IRFZ46ZSPBF
- IRFZ46ZPBF
- IRFZ46ZLPBF
- IRFZ46Z
- IRFZ46S
- IRFZ46NSTRLPBF/BKN
- IRFZ46NSTRLPBF
- IRFZ46NPBF
- IRFZ46NLPBF
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44ZSTRRPBF
- IRFZ44ZSPBF
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4BC数据表相关新闻
IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-24IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-23IRFZ44NPBF原装现货
IRFZ44NPBF原装正品
2021-8-10IRG4PC50WPBF
属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-17IRFZ44NPBF选拓亿芯电子，国际电子元器件供应商
元器件优质供应
2019-11-1
DdatasheetPDF页码索引
- P1
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- P31
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- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
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- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
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- P58
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- P60
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- P62
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- P64
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- P71
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- P79
- P80
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