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IRG4价格
参考价格:¥6.7890
型号:IRG4BC10KDPBF 品牌:International 备注:这里有IRG4多少钱,2024年最近7天走势,今日出价,今日竞价,IRG4批发/采购报价,IRG4行情走势销售排行榜,IRG4报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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Short Circuit Rated UltraFast IGBT ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Bene | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) Features •Extremelylowvoltagedrop;1.1Vtypicalat2A •S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives,upto2KHzinChopperApplications •VeryTightVce(on)distribution •IndustrystandardTO-220ABpackage Benef | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE StandardSpeedCoPackIGBT Features •Extremelylowvoltagedrop1.1Vtyp.@2A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-so | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE StandardSpeedCoPackIGBT Features •Extremelylowvoltagedrop1.1Vtyp.@2A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-so | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR Features •Extremelylowvoltagedrop;1.1Vtypicalat2A •S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives,upto2KHzinChopperApplications •VeryTightVce(on)distribution •IndustrystandardTO-220ABpackage • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighoperating upto80kHzinhardswitching,>200kHzin resonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousGeneration •IGBTco-packagedwith | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A) Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTco-packagedwithultra-soft-recoveryanti-paralleldiodes •IndustrystandardTO-220ABpackage Benefits •BestValueforApplianceandIndustrialapplications •Offershighesteffic | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTco-packagedwithultra-soft-recoveryanti-paralleldiodes •IndustrystandardTO-220ABpackage •Lead-Free Benefits •BestValueforApplianceandIndustrialapplications •Offers | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) Features •UltraFast:Optimizedforhighfrequenciesfrom10to30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage Benefits •BestValueforApplianceandIndustrialApplications •HighnoiseimmunePositiveOnlygated | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages Benefits •BestValueforApplianceandIndustrialApplications | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardTO-220ABpackage •Lead-Free Benefits •BestValueforApplianceandIndustrialApplications •Highnoiseimmune | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages Benefits •BestValueforApplianceandIndustrialApplications | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Genera | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features •Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage •Lead-Free Benef | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •ShortCircuitRatedUltraFast:Optimizedfor highoperatingfrequencies>5.0kHz,andShort CircuitRatedto10μs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXF | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMul | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Short Circuit Rated UltraFast IGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgenerations • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforinterme | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermed | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardD2Pakpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardD2Pakpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) Features •Extremelylowvoltagedrop1.4Vtyp.@10A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-para | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Extremelylowvoltagedrop1.4Vtyp.@10A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-paralleldio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDultrafast, ultra-s | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
UltraFast CoPack IGBT Features •UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFRED®ultrafast,ultra-soft-recoveryanti-pa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGenera | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGenera | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterpara- meterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
UltraFast Speed IGBT Features •UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generati | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
IRG4产品属性
- 类型
描述
- 型号
IRG4
- 功能描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8.9A I(C) | TO-220FP
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
35890 |
||||
IR |
TO-220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
2020+ |
TO-220AB |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IR |
23+ |
TO-220AB |
7300 |
专注配单,只做原装进口现货 |
|||
IR |
2021+ |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
2024+实力库存 |
TO-220 |
150 |
只做原厂渠道 可追溯货源 |
|||
IR |
22+ |
TO-220 |
4500 |
全新原装品牌专营 |
|||
IR |
23+ |
TOTO-220AB |
12300 |
全新原装真实库存含13点增值税票! |
|||
ir |
23+ |
NA |
4111 |
专做原装正品,假一罚百! |
IRG4规格书下载地址
IRG4参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4BC30FD1PBF
- IRG4BC20UPBF
- IRG4BC20UDSTRRP
- IRG4BC20UD-SPBF
- IRG4BC20UDPBF
- IRG4BC20SPBF
- IRG4BC20SD-SPBF
- IRG4BC20SDPBF
- IRG4BC20MDPBF
- IRG4BC20KDSTRLP
- IRG4BC20KD-SPBF
- IRG4BC20KDPBF
- IRG4BC20FPBF
- IRG4BC20FDPBF
- IRG4BC15UD-SPBF
- IRG4BC15UDPBF
- IRG4BC15UD-LPBF
- IRG4BC10UDPBF
- IRG4BC10KPBF
- IRG4BC10KDPBF
- IRFZ48ZSPBF
- IRFZ48Z
- IRFZ48VSPBF
- IRFZ48VPBF
- IRFZ48V
- IRFZ48SPBF
- IRFZ48S
- IRFZ48RSPBF
- IRFZ48RPBF
- IRFZ48R
- IRFZ48PBF
- IRFZ48NSTRLPBF
- IRFZ48NSPBF
- IRFZ48NPBF
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46ZSTRLPBF
- IRFZ46ZSPBF
- IRFZ46ZPBF
- IRFZ46ZLPBF
- IRFZ46Z
- IRFZ46S
- IRFZ46NSTRLPBF/BKN
- IRFZ46NSTRLPBF
- IRFZ46NPBF
- IRFZ46NLPBF
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44ZSTRRPBF
- IRFZ44ZSPBF
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4数据表相关新闻
IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-24IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-23IRFZ44NPBF原装现货
IRFZ44NPBF原装正品
2021-8-10IRG4PC50WPBF
属性参数值 商品目录IGBT管 集电极电流(Ic)(最大值)55A 集射极击穿电压(最大值)600V 类型- 不同Vge,Ic时的Vce(on)2.3V@15V,27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中,焕盛达-专注原装用芯服务;
2020-7-17IRFZ44NPBF选拓亿芯电子,国际电子元器件供应商
元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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