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IRFZ44V价格
参考价格:¥2.0864
型号:IRFZ44VPBF 品牌:International 备注:这里有IRFZ44V多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ44V批发/采购报价,IRFZ44V行情走势销售排行榜,IRFZ44V报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFZ44V | 60A 60V N CHANNEL POWER MOSFET FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦DCmotorcontrol ♦UPS ♦ClassDAmplifier | FCI Amphenol ICC | ||
IRFZ44V | Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFZ44V | N-CHANNEL Power MOSFET FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦DCmotorcontrol ♦UPS ♦ClassDAmplifier | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. | ||
IRFZ44V | N-Channel MOSFET Transistor 文件:338.23 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Ultra Low On-Resistance Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | |||
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:232.1 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:232.1 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor 文件:338.55 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:378.2 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:378.2 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Isc N-Channel MOSFET Transistor 文件:299.42 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
IRFZ44V产品属性
- 类型
描述
- 型号
IRFZ44V
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2016+ |
TO220F |
6528 |
只做进口原装现货!假一赔十! |
|||
INFINEON |
22+ |
TO-220 |
12000 |
原装正品!!!优势库存!0755-83210901 |
|||
IR |
2020+ |
TO220 |
350000 |
100%进口原装正品公司现货库存 |
|||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
|||
IR/International Rectifier/国 |
21+ |
TO-220 |
5751 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
23+ |
TO-220 |
19526 |
||||
IR |
23+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
INFINEON/英飞凌 |
21+ |
D2-PAK(TO-263) |
56890 |
明嘉莱只做原装正品现货 |
|||
IR/VISHAY |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IR |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
IRFZ44V规格书下载地址
IRFZ44V参数引脚图相关
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IRFZ44V数据表相关新闻
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2021-11-23IRFZ44NPBF原装现货
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2021-8-10IRG4PC50WPBF
属性参数值 商品目录IGBT管 集电极电流(Ic)(最大值)55A 集射极击穿电压(最大值)600V 类型- 不同Vge,Ic时的Vce(on)2.3V@15V,27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中,焕盛达-专注原装用芯服务;
2020-7-17IRFZ44NPBF选拓亿芯电子,国际电子元器件供应商
元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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