IRFZ44NS价格

参考价格:¥3.0663

型号:IRFZ44NSPBF 品牌:INTERNATIONAL 备注:这里有IRFZ44NS多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ44NS批发/采购报价,IRFZ44NS行情走势销售排行榜,IRFZ44NS报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFZ44NS

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44NS

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinasurfacemountingplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseins

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRFZ44NS

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFZ44NS

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFZ44NS

55V N-Channel MOSFET

DESCRIPTION ThisadvancedPowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit, combinedwiththefastswitchingspeedandruggedized devicedesignthatHEXFETpowerMOSFETsarewell knownfor,

TGS

Tiger Electronic Co.,Ltd

TGS
IRFZ44NS

60V N-Channel MOSFET

文件:867.82 Kbytes Page:8 Pages

UMWUMW Rightway Semiconductor Co., Ltd.

友台友台半导体

UMW

HEXFET짰Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel 60-V (D-S) MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:340.05 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:340.05 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFZ44NS产品属性

  • 类型

    描述

  • 型号

    IRFZ44NS

  • 功能描述

    MOSFET N-CH 55V 49A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2024-6-4 21:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
24+
D2PAK
30000
晶体管-分立半导体产品-原装正品
UMW(广东友台半导体)
24+
TO-263
5000
诚信服务,绝对原装原盘。
IR
23+
D2-Pak
7600
全新原装现货
IR
21+
TO-263
6688
十年老店,原装正品
IR
2020+
TO263
350000
100%进口原装正品公司现货库存
UMW 友台
23+
TO-263
20000
原装正品,实单请联系
IR
2024+
TO-263-3
32560
原装优势绝对有货
INFINEON/英飞凌
2021+
TO-263
18368
原装进口假一罚十
INFINEON/英飞凌
23+
TO-263
90000
只做原厂渠道价格优势可提供技术支持
INFINEON
2021
TO-263
1600
全新原装公司现货

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