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IRFS9N60A价格
参考价格：￥6.6294
型号：IRFS9N60APBF 品牌：Vishay 备注：这里有IRFS9N60A多少钱，2024年最近7天走势，今日出价，今日竞价，IRFS9N60A批发/采购报价，IRFS9N60A行情走势销售排行榜，IRFS9N60A报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFS9N60A | SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •HighSpeedPowerSw | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFS9N60A | PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib | VishayVishay Siliconix 威世科技 |  | |
IRFS9N60A | iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.75Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFS9N60A | PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世科技 | | | |
SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •HighSpeedPowerSw | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：223.37 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：223.37 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：223.37 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMosfetTransistor DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=8.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleD | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-channelEnhancementModePowerMOSFET 文件：374.44 Kbytes Page：6 Pages | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | | |
N-ChannelMOSFET 文件：784.87 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
N-ChannelMOSFET 文件：784.87 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
IRFS9N60A产品属性
- 类型
描述
- 型号
IRFS9N60A
- 功能描述
MOSFET N-Chan 600V 9.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2020+ |
TO-263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON/英飞凌 |
21+23+ |
TO-263 |
31800 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
23+ |
N/A |
90550 |
正品授权货源可靠 |
||||
IR |
23+ |
TO-220 |
6000 |
全新原装现货 |
|||
IR |
2015+ |
D2-Pak |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
23+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
2023+ |
D2-pak |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
IR |
2020+ |
D2-PAK |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
VISHAY(威世) |
23+ |
TO-263-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
22+ |
TO-263-2 |
12800 |
本公司只做进口原装!优势低价出售! |
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