AdvencedPowerMOSFET(N-CHANNEL)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

iscSiliconNPNPowerTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea

Compact,PortableIP67MilitaryFastEthernetSwitch

PRODUCTDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinawiderangeofmilitaryandcommercial land,sea,andairapplications.Whenbuilding communicationswheredataprioritizationisnota concernandtheamountoftrafficislow,unmanaged, FastEthernetswitche

PulseEncapsulatedP.C.BoardMount

Features Theseferritecoredtransformersarefullyencapsulatedinahighgradeblackmoldedcase withaUL94V-Orating. Unitsareintendedforwidebandandpulseapplicationsincludingthyristor/triacfiring circuits. Peakpulsevoltageratingmaximumof250V. Insulationtestedto1,000

횠6.35mmmountingBlackanodisedaluminiumhousing

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LowProfile

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AluminumCapacitors125°C,Non-Polar,Miniature

文件：71.27 Kbytes Page：3 Pages