IRFR310价格

参考价格:¥1.9500

型号:IRFR310BTM 品牌:FAIRCHILD 备注:这里有IRFR310多少钱,2024年最近7天走势,今日出价,今日竞价,IRFR310批发/采购报价,IRFR310行情走势销售排行榜,IRFR310报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=1.7A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFR310

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay
IRFR310

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFR310

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFR310

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR310,SiHFR310) •Straightlead(IRFU310,SiHFU310) •Availableintapeandreel •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技

Vishay
IRFR310

iscN-ChannelMOSFETTransistor

文件:332.27 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR310,SiHFR310) •Straightlead(IRFU310,SiHFU310) •Availableintapeandreel •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技

Vishay

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):2.815Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

iscN-ChannelMOSFETTransistor

文件:321.88 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:321.88 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:2.0329 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=3.6廓,ID=1.7A)

文件:1.80909 Mbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.12245 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

UltraLowBiasCurrentVaractorBridgeOperationalAmplifiers

文件:984.54 Kbytes Page:5 Pages

INTRONICS

Intronics Power, Inc.

INTRONICS

FourwireKelvinleadmeasurements

文件:933.59 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

INTERCONNECTS.100??Grid(.018??dia.)PinsSMTGullWingHeaders&SocketsSingleandDoubleRow

文件:199.28 Kbytes Page:1 Pages

MILL-MAX

Mill-Max Manufacturing Corp.

MILL-MAX

UltraLowBiasCurrentVaractorBridgeOperationalAmplifiers

文件:50.19 Kbytes Page:1 Pages

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

SCREWTYPESERIES

文件:382.28 Kbytes Page:1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子(上海)有限公司

DBLECTRO

IRFR310产品属性

  • 类型

    描述

  • 型号

    IRFR310

  • 功能描述

    MOSFET N-Chan 400V 1.7 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-3 18:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ir
dc06
原厂封装
120
INSTOCK:75/tube/dpak
IR
1715+
SOP
251156
只做原装正品现货假一赔十!
VISHAY(威世)
23+
TO-252
9908
支持大陆交货,美金交易。原装现货库存。
VISHAY
23+
D2Pak
7750
全新原装优势
FAIRCHILD
23+
TO-252
2000
正规渠道,只有原装!
IR
06+
TO-252
15000
原装
Vishay Siliconix
24+
TO-252AA
30000
晶体管-分立半导体产品-原装正品
IR
24+
TO 252
161027
明嘉莱只做原装正品现货
IR
2020+
TO252
350000
100%进口原装正品公司现货库存
IR
22+23+
TO-252
14998
绝对原装正品全新进口深圳现货

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