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IRFR214价格
参考价格:¥2.2630
型号:IRFR214PBF 品牌:Vishay 备注:这里有IRFR214多少钱,2024年最近7天走势,今日出价,今日竞价,IRFR214批发/采购报价,IRFR214行情走势销售排行榜,IRFR214报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFR214 | 2.2A,250V,2.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareadvancedpowerMOSFETsaredesignedforuseinapplicationssuchasswitchingregulators | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRFR214 | PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=2.2A) HEXFET®PowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=2.2A | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFR214 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | ||
IRFR214 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFR214 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR214,SiHFR214) •Straightlead(IRFU214,SiHFU214) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | ||
IRFR214 | PowerMOSFET 文件:853.62 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | ||
IRFR214 | iscN-ChannelMOSFETTransistor 文件:331.94 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR214,SiHFR214) •Straightlead(IRFU214,SiHFU214) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | |||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
HEXFET짰PowerMOSFET HEXFET®PowerMOSFET •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR214) •StraightLead(IRFU214) •AvailableinTape&Reel •FastSwitching •EaseofParalleling •Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:853.62 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
iscN-ChannelMOSFETTransistor 文件:321.15 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
M8Male3PinFieldAttachable 文件:179.39 Kbytes Page:2 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
M8Male3PinFieldAttachable 文件:179.39 Kbytes Page:2 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
Li-ion/Li-PolymerBatteryChargerAcceptingTwoPowerSources 文件:193.94 Kbytes Page:11 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
ASeries1-4PoleRotarySwitches 文件:1.26409 Mbytes Page:5 Pages | CK-COMPONENTS C&K Components | |||
1-4PoleRotarySwitches 文件:299.98 Kbytes Page:5 Pages | CK-COMPONENTS C&K Components |
IRFR214产品属性
- 类型
描述
- 型号
IRFR214
- 功能描述
MOSFET N-Chan 250V 2.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
|||
IR |
20+/21+ |
SOT-252 |
10000 |
全新原装现货 |
|||
IR |
24+ |
TO 252 |
161397 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-252 |
6680 |
全新原装优势 |
|||
VISHAY |
2017+ |
TO-252 |
1 |
原厂/代理渠道价格优势 |
|||
harris |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
|||
IR |
07+ |
TO-252 |
3500 |
||||
INTREC |
23+ |
NA |
564 |
专做原装正品,假一罚百! |
|||
IOR |
22+ |
TO-252 |
2987 |
绝对全新原装现货供应! |
|||
IR |
23+24 |
TO-252 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
IRFR214规格书下载地址
IRFR214参数引脚图相关
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- ks20
- km710
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- k2055
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- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFS634
- IRFS630
- IRFS540
- IRFS530
- IRFS510
- IRFS450
- IRFS250
- IRFRC20
- IRFR825
- IRFR812
- IRFR48Z
- IRFR420
- IRFR410
- IRFR330
- IRFR325
- IRFR320
- IRFR310
- IRFR2405TRLPBF
- IRFR2405PBF
- IRFR2307ZTRLPBF
- IRFR2307ZPBF
- IRFR230
- IRFR224TRPBF
- IRFR224TRLPBF
- IRFR224PBF
- IRFR224
- IRFR220TRRPBF
- IRFR220TRPBF
- IRFR220TRLPBF-CUTTAPE
- IRFR220TRLPBF
- IRFR220PBF
- IRFR220NTRPBF-CUTTAPE
- IRFR220NTRPBF
- IRFR220NTRLPBF-CUTTAPE
- IRFR220NTRLPBF
- IRFR220NPBF
- IRFR220
- IRFR214TRPBF
- IRFR214PBF
- IRFR210TRPBF
- IRFR210TRLPBF
- IRFR210PBF
- IRFR210BTF
- IRFR210
- IRFR1N60ATRPBF
- IRFR1N60APBF
- IRFR18N15DTRPBF
- IRFR18N15DTRLP
- IRFR18N15DPBF
- IRFR15N20DTRPBF
- IRFR15N20DTRLP
- IRFR15N20DPBF
- IRFR13N20DTRPBF
- IRFR13N20DTRLP
- IRFR13N20DPBF
- IRFR13N15DTRPBF
- IRFR13N15DPBF
- IRFR120ZTRPBF
- IRFR120ZTRLPBF
- IRFR120ZPBF
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
- IRFR010
- IRFQ110
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
IRFR214数据表相关新闻
IRFR15N20DTRPBF
表面贴装型N通道200V17A(Tc)3W(Ta),140W(Tc)D-PAK(TO-252AA)
2022-10-19IRFR13N20DTRPBF
联系人张生电话19926428992QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs,Id)235mΩ10V,8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!
2021-1-26IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405PDF资料
2019-1-28
DdatasheetPDF页码索引
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