位置：首页 > IC中文资料第2267页 > IRFR13N15DTRR
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PowerMOSFET(Vdss=150V,Rds(on)max=0.18ohm,Id=14A) Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
N-ChannelMOSFETTransistor •DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-ChannelMOSFETTransistor •DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IRFR13N15DTRR产品属性
- 类型
描述
- 型号
IRFR13N15DTRR
- 功能描述
MOSFET N-CH 150V 14A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
D-pak |
8800 |
公司只作原装正品 |
|||
INFINEON/英飞凌 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
IR |
1415+ |
TO-252(DPAK) |
28500 |
全新原装正品,优势热卖 |
|||
IR |
22+ |
TO-252 |
150 |
原装现货假一赔十 |
|||
INFINEON/英飞凌 |
22+ |
TO220 |
12800 |
本公司只做进口原装!优势低价出售! |
|||
VISHAY |
2018+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
22+ |
TO-252 |
25000 |
只有原装绝对原装,支持BOM配单! |
|||
INFINEON/英飞凌 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Infineon/英飞凌 |
23+ |
D-pak |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
|||
IR |
23+ |
D-Pak |
7600 |
全新原装现货 |
IRFR13N15DTRR芯片相关品牌
IRFR13N15DTRR规格书下载地址
IRFR13N15DTRR参数引脚图相关
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- IRFR15N20DTRRP
- IRFR15N20DTRPBF
- IRFR15N20DTRLP
- IRFR15N20DTRLHR
- IRFR15N20DPBF
- IRFR15N20DHR
- IRFR13N20DTRRP
- IRFR13N20DTRR
- IRFR13N20DTRPBF
- IRFR13N20DTRLP
- IRFR13N20DTRL
- IRFR13N20DTR
- IRFR13N20DPBF
- IRFR13N20DCTRRP
- IRFR13N20DCTRLP
- IRFR13N20DCPBF
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- IRFR13N15DTRRP
- IRFR13N15DTRPBF
- IRFR13N15DTRLP
- IRFR13N15DTRL
- IRFR13N15DTR
- IRFR13N15DPBF
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- IRFR12N25DTRPBF
- IRFR12N25DTRLP
- IRFR12N25DTRLHR
- IRFR12N25DPBF
- IRFR12N25DHR
- IRFR12N25DCTRRP
- IRFR12N25DCTRLP
- IRFR12N25DCPBF
- IRFR12N25D
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IRFR13N15DTRR数据表相关新闻
IRFR15N20DTRPBF
表面贴装型N通道200V17A（Tc）3W（Ta），140W（Tc）D-PAK（TO-252AA）
2022-10-19IRFP4668PBF 全新原装现货
IRFP4668PBF
2022-6-27IRFR13N20DTRPBF
联系人张生电话19926428992QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
2021-10-12IRFP460PBF
IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF原装现货供应0755-2889238913713856319QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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