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IRFR120TR价格
参考价格：￥1.5816
型号：IRFR120TRPBF 品牌：Vishay 备注：这里有IRFR120TR多少钱，2024年最近7天走势，今日出价，今日竞价，IRFR120TR批发/采购报价，IRFR120TR行情走势销售排行榜，IRFR120TR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR120TR | HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR120) •Str | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFR120TR | IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 |  | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
DynamicdV/dtRating 文件：4.27854 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
DynamicdV/dtRating 文件：4.27854 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
N-Channel100V(D-S)MOSFET 文件：979.6 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. |  | | |
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 |  | | |
THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY-PRESSIN 文件：106.68 Kbytes Page：1 Pages | WITTEN Witten Company, Inc. |  | | |
PrecisionWirewoundResistors 文件：318.25 Kbytes Page：2 Pages | Riedon Riedon Inc. | | | |
TemperatureSensorsLineGuide 文件：736.09 Kbytes Page：11 Pages | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 |  | |
IRFR120TR产品属性
- 类型
描述
- 型号
IRFR120TR
- 功能描述
MOSFET N-Chan 100V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
09+ |
SOT |
1100 |
全新原装 实单必成 |
|||
Vishay(威世) |
22+ |
NA |
6500 |
原厂原装现货 |
|||
VB |
21+ |
TO252D-PAK |
10000 |
原装现货假一罚十 |
|||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
Vishay |
21+ |
N/A |
4000 |
深圳通 |
|||
VISHAY |
23+ |
3000 |
全新原装现货库存 |
||||
VISHAY/威世 |
21+ |
65200 |
|||||
IR |
17+ |
TO-252 |
6200 |
||||
IR |
2020+ |
SOT-252 |
10 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
vishay |
22+ |
500000 |
行业低价,代理渠道 |
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IRFR120TR规格书下载地址
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IRFR120TR数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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DdatasheetPDF页码索引
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