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IRFR014TR价格
参考价格：￥1.3797
型号：IRFR014TRPBF 品牌：Vishay 备注：这里有IRFR014TR多少钱，2024年最近7天走势，今日出价，今日竞价，IRFR014TR批发/采购报价，IRFR014TR行情走势销售排行榜，IRFR014TR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR014TR | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 |  |   |
IRFR014TR | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFR014TR | PowerMOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
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IRFR014TR产品属性
- 类型
描述
- 型号
IRFR014TR
- 功能描述
MOSFET N-Chan 60V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
TO-252-3 |
690000 |
支持实单/只做原装 |
|||
IR |
23+ |
NA |
12000 |
全新原装假一赔十 |
|||
VISHAY/威世 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
15+ |
TO-252 |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY |
2030 |
TO-252 |
16000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Vishay Siliconix |
23+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
18+ |
TO252 |
9862 |
全新原装现货/假一罚百! |
|||
VISHAY/威世 |
23+ |
TO-252 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
IR |
1318+ |
SOT252 |
23568 |
优势现货可17%税 |
IRFR014TR芯片相关品牌
IRFR014TR规格书下载地址
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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DdatasheetPDF页码索引
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