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IRFP350价格
参考价格：￥47.1517
型号：IRFP350 品牌：Vishay 备注：这里有IRFP350多少钱，2024年最近7天走势，今日出价，今日竞价，IRFP350批发/采购报价，IRFP350行情走势销售排行榜，IRFP350报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP350 | 16A,400V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
IRFP350 | PowerMOSFET(Vdss=400V,Rds(on)=0.30ohm,Id=16A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFP350 | N-CHANNELPOWERMOSFETS FEATURES ●LowRDS(on) ●ImprovedInducttiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3Ppackage | SamsungSamsung Group 三星三星半导体 |  | |
IRFP350 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 |  | |
IRFP350 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
IRFP350 | PowerMOSFET 文件：1.61166 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
IRFP350 | PowerMOSFET 文件：1.56932 Mbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
IRFP350 | iscN-ChannelMOSFETTransistor 文件：67.81 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFP350 | N-ChannelPowerMosfet 文件：637.84 Kbytes Page：6 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
IRFP350 | PowerMOSFET 文件：1.5891 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 | | | |
AdvancedPowerMOSFET FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):0.254Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=17A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VGSrating •ReducedCiss,Coss,Crss •Isolatedcentralmountinghole •DynamicdV/dtrated •Repetitiveavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc? | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET(Vdss=400V,Rds(on)=0.30ohm,Id=16A) Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VGSrating •ReducedCiss,Coss,Crss •Isolatedcentralmountinghole •DynamicdV/dtrated •Repetitiveavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc? | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.5891 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.61166 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor 文件：70.04 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETransistor 文件：409.62 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFET 文件：1.33852 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.98549 Mbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.33852 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.33852 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.98549 Mbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
HEXFET짰PowerMOSFET 文件：891.45 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：1.56932 Mbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.61166 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor 文件：67.82 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
LowInductance,Radial,AluminumElectrolyticHighFrequency,SolidAluminumTop 文件：182.95 Kbytes Page：4 Pages | CDE Cornell Dubilier Electronics |  | | |
CeleronMProcessoron90nmProcess 文件：879.41 Kbytes Page：68 Pages | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） |  | | |
9x14mmDifferentialPECLHighFrequencyVCXO(416MHzto832MHz) 文件：105.86 Kbytes Page：2 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 |  | | |
HEADERSTRIPS.100??GridSolderTailSingleRow 文件：116.48 Kbytes Page：1 Pages | MILL-MAX Mill-Max Manufacturing Corp. |  | | |
CeleronDProcessor 文件：1.75778 Mbytes Page：82 Pages | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | |
IRFP350产品属性
- 类型
描述
- 型号
IRFP350
- 功能描述
MOSFET N-Chan 400V 16 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-247 |
50000 |
终端可免费提供样品,欢迎咨询 |
|||
IR |
22+ |
TO-247 |
4650 |
||||
23+ |
N/A |
30350 |
正品授权货源可靠 |
||||
IR |
22+ |
原厂封装 |
15850 |
原装正品，实单请联系 |
|||
VISHAY/威世 |
22+ |
TO-247 |
7500 |
只做原装正品假一赔十!正规渠道订货! |
|||
VISHAY |
15+ |
DIPSOP |
12300 |
原装进口现货,假一罚十 |
|||
VISHAY |
23+ |
TO-247 |
65400 |
||||
IR |
2048+ |
TO-247 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
Vishay Siliconix |
23+ |
TO-247AC |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
19+20+ |
TO-247 |
9443 |
全新原装房间现货 可长期供货 |
IRFP350芯片相关品牌
IRFP350规格书下载地址
IRFP350参数引脚图相关
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- jumper
- jtag接口
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- isd1420
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
- IRFP470
- IRFP462
- IRFP460
- IRFP453
- IRFP452
- IRFP451
- IRFP450
- IRFP448
- IRFP440
- IRFP4368PBF
- IRFP4332PBF
- IRFP4321PBF
- IRFP4310ZPBF
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- IRFP4229PBF
- IRFP4227PBF
- IRFP4137PBF
- IRFP4127PBF
- IRFP4110PBF
- IRFP4004PBF
- IRFP3710PBF
- IRFP3703PBF
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- IRFP351
- IRFP350PBF
- IRFP350LCPBF
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- IRFP264
- IRFP260PBF
- IRFP260NPBF
- IRFP260NHR
- IRFP260MPBF
- IRFP260
- IRFP257
- IRFP256
- IRFP255
- IRFP254PBF
- IRFP254
- IRFP253
- IRFP252
- IRFP251
- IRFP250
- IRFP247
- IRFP246
- IRFP245
- IRFP244
- IRFP240
- IRFP153
- IRFP152
- IRFP151
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