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IRFP26N60L价格
参考价格：￥22.0084
型号：IRFP26N60LPBF 品牌：Vishay 备注：这里有IRFP26N60L多少钱，2024年最近7天走势，今日出价，今日竞价，IRFP26N60L批发/采购报价，IRFP26N60L行情走势销售排行榜，IRFP26N60L报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP26N60L | SMPSMOSFET FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Applica | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFP26N60L | PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技 |  | |
IRFP26N60L | iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.25Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFP26N60L | PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | | |
IRFP26N60L | PowerMOSFET 文件：226.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技 | | | |
HEXFETPowerMOSFET(VDSS=600V,RDS(on)typ.=210m廓,Trrtyp.=170ns,ID=26A) FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：226.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
IRFP26N60L产品属性
- 类型
描述
- 型号
IRFP26N60L
- 功能描述
MOSFET N-Chan 600V 26 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
13+ |
TO-247 |
174 |
全新原装 实单必成 |
|||
VISHAY/威世 |
2022+ |
TO-247 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IR |
2020+ |
TO-3P |
350000 |
100%进口原装正品公司现货库存 |
|||
IR |
TO-247 |
68900 |
原包原标签100%进口原装常备现货! |
||||
IR |
22+ |
TO-247 |
88966 |
||||
Vishay Siliconix |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
IR/VISHAY |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
|||
IR |
08+(pbfree) |
TO-247AC |
8866 |
||||
VISHAY-威世 |
24+25+/26+27+ |
TO-247-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Vishay Siliconix |
24+ |
TO-247AC |
30000 |
晶体管-分立半导体产品-原装正品 |
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IRFP26N60L规格书下载地址
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IRFP26N60L数据表相关新闻
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瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-26
DdatasheetPDF页码索引
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