IRFP240价格

参考价格:¥35.0000

型号:IRFP240 品牌:Vishay 备注:这里有IRFP240多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP240批发/采购报价,IRFP240行情走势销售排行榜,IRFP240报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFP240

20A,200V,0.180Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRFP240

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=20A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFP240

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu

VishayVishay Siliconix

威世科技

Vishay
IRFP240

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=200V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) •FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFP240

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFP240

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技

Vishay
IRFP240

PowerMOSFET

文件:1.63401 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFP240

PowerMOSFET

文件:1.61145 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFP240

iscN-ChannelMOSFETTransistor

文件:322.74 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技

Vishay

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.18Ω ID=20A FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10µA(Max.)@VDS=200V LowerRDS(ON):0.144Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFET짰PowerMOSFET

.VDSS=200V,RDS(on)=0.18Ohm,ID=20A Lead-Free

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:1.61145 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

文件:322.74 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:1.63401 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.63401 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

DirectreplacementforBA15d

文件:202.07 Kbytes Page:4 Pages

MARL

Marl International Ltd

MARL

MINIATUREFUSES-5x25mm

文件:79.03 Kbytes Page:2 Pages

LittelfuseLittelfuse Inc.

力特富斯(Littelfuse)力特公司

Littelfuse

5x25mmMINIATUREFUSES

文件:79.32 Kbytes Page:2 Pages

LittelfuseLittelfuse Inc.

力特富斯(Littelfuse)力特公司

Littelfuse

240W-SingleOutputAC-DCConverter-UniversalInput-Isolated&RegulatedIndustrialDINRailPowerSupply

文件:2.06087 Mbytes Page:5 Pages

GAPTECGAPTEC Electronic

GAPTECGAPTEC Electronic

GAPTEC

240W-SingleOutputAC-DCConverter-UniversalInput-Isolated&RegulatedIndustrialDINRailPowerSupply

文件:2.06087 Mbytes Page:5 Pages

GAPTECGAPTEC Electronic

GAPTECGAPTEC Electronic

GAPTEC

IRFP240产品属性

  • 类型

    描述

  • 型号

    IRFP240

  • 功能描述

    MOSFET N-Chan 200V 20 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-7 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEC
21+
TO-3P
50000
终端可免费提供样品,欢迎咨询
SEC
21+
TO-3P
10000
原装现货假一罚十
VISHAY
23+
TO-247
65400
VISHAY
19+
TO-247
133
只做原装正品
VISHAY/威世
22+
TO-247
9800
只做原装正品假一赔十!正规渠道订货!
Vishay Siliconix
24+
TO-247AC
30000
晶体管-分立半导体产品-原装正品
HARRIS
23+
TO-3P
5000
原装正品,假一罚十
IR
22+
TO-247
9000
原装正品
IR
22+
原厂封装
15850
原装正品,实单请联系
VISHAY
2020+
TO-247
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增

IRFP240芯片相关品牌

  • Actel
  • bel
  • CALIBER
  • EMERSON-NETWORKPOWER
  • KERSEMI
  • NJRC
  • PANDUIT
  • RichTek
  • SCHNEIDER
  • SECOS
  • TI
  • YAGEO

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