IRFP23N50L价格

参考价格:¥17.4590

型号:IRFP23N50LPBF 品牌:Vishay 备注:这里有IRFP23N50L多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP23N50L批发/采购报价,IRFP23N50L行情走势销售排行榜,IRFP23N50L报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFP23N50L

PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A)

FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFP23N50L

PowerMOSFET

FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技

Vishay
IRFP23N50L

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFP23N50L

PowerMOSFET

FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza

VishayVishay Siliconix

威世科技

Vishay
IRFP23N50L

PowerMOSFET

文件:223.5 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFP23N50L

PowerMOSFET

文件:200.94 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A)

FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead-Free

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:200.94 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:223.5 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:223.5 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFUJI CORPORATION

株式会社FUJI

Fuji

iscN-ChannelMOSFETTransistor

文件:345.38 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRFP23N50L产品属性

  • 类型

    描述

  • 型号

    IRFP23N50L

  • 功能描述

    MOSFET N-Chan 500V 23 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-21 22:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay Siliconix
24+
TO-247AC
30000
晶体管-分立半导体产品-原装正品
IR
2020+
TO247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
VISHAY/威世
22+
100000
代理渠道/只做原装/可含税
IR
24+
TO247
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
Vishay(威世)
23+
NA/
8735
原厂直销,现货供应,账期支持!
VISHAY(威世)
23+
TO-247
7810
支持大陆交货,美金交易。原装现货库存。
VISHAY(威世)
23+
TO2473
6000
Vishay
21+
N/A
50
深圳通
VISHAY
21+
TO-247
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
2022
TO247
80000
原装现货,OEM渠道,欢迎咨询

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