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IRFP23N50L价格
参考价格:¥17.4590
型号:IRFP23N50LPBF 品牌:Vishay 备注:这里有IRFP23N50L多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP23N50L批发/采购报价,IRFP23N50L行情走势销售排行榜,IRFP23N50L报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFP23N50L | PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFP23N50L | PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技 | ||
IRFP23N50L | iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFP23N50L | PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | ||
IRFP23N50L | PowerMOSFET 文件:223.5 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | ||
IRFP23N50L | PowerMOSFET 文件:200.94 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:200.94 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:223.5 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:223.5 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社FUJI | |||
iscN-ChannelMOSFETTransistor 文件:345.38 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
IRFP23N50L产品属性
- 类型
描述
- 型号
IRFP23N50L
- 功能描述
MOSFET N-Chan 500V 23 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
TO-247AC |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
2020+ |
TO247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VISHAY/威世 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
IR |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Vishay(威世) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
VISHAY(威世) |
23+ |
TO-247 |
7810 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY(威世) |
23+ |
TO2473 |
6000 |
||||
Vishay |
21+ |
N/A |
50 |
深圳通 |
|||
VISHAY |
21+ |
TO-247 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2022 |
TO247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
IRFP23N50L规格书下载地址
IRFP23N50L参数引脚图相关
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- l100
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- isd1420
- IRFP352
- IRFP351
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- IRFP264
- IRFP260PBF
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- IRFP260NHR
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- IRFP260
- IRFP257
- IRFP256
- IRFP255
- IRFP254PBF
- IRFP254
- IRFP253
- IRFP252
- IRFP251
- IRFP250PBF
- IRFP250NPBF
- IRFP250MPBF
- IRFP250
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- IRFP246
- IRFP245
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- IRFP150
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- IRFP140NPBF
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- IRFP133
- IRFP132
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- IRFP130
- IRFP064PBF
- IRFP064NPBF
- IRFP064
- IRFP054PBF
- IRFP054NPBF
- IRFP054
- IRFP048RPBF
- IRFP048PBF
- IRFP048NPBF
- IRFP048
- IRFP044
- IRFNG50
- IRFNG40
- IRFN450
- IRFN440
- IRFN350
- IRFN340
- IRFN250
IRFP23N50L数据表相关新闻
IRFP064NPBF
IRFP064NPBF
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2019-4-26
DdatasheetPDF页码索引
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