IRFP22价格

参考价格:¥7.8073

型号:IRFP22N50APBF 品牌:VISHAY 备注:这里有IRFP22多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP22批发/采购报价,IRFP22行情走势销售排行榜,IRFP22报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptablePowerS

VishayVishay Siliconix

威世科技

Vishay

iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.23Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

Vishay

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23廓 , ID = 22A )

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCur

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SMPS MOSFET

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技

Vishay

iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技

Vishay

HEXFET Power MOSFET

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:342.34 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:319.79 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:319.79 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:342.34 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT) 描述:MOSFET N-CH 650V 22A TO247-3 分立半导体产品 晶体管 - FET,MOSFET - 单个

VishayVishay Siliconix

威世科技

Vishay

IRFP22产品属性

  • 类型

    描述

  • 型号

    IRFP22

  • 功能描述

    MOSFET N-Chan 500V 22 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-7 12:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
09+10+11+
1
普通
VISHAY/威世
21+
TO-3P
10000
原装现货假一罚十
VISHAY
23+
TO-247-3
2525
原装现货支持送检
IR
2023+
TO-247
50000
原装现货
Infineon Technologies
23+
原装
5000
原装正品,提供BOM配单服务
IR
23+
1018
TO-247
Infineon
2023
6000
公司原装现货/支持实单
VISHAY
23+
TO-247
65400
23+
N/A
98000
一级代理放心采购
VISHAY
23+
TO-247-3
50000
原装正品 支持实单

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