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位置：首页 > IC中文资料第870页 > IRF840

IRF840价格

参考价格：￥14.2325

型号：IRF840 品牌：Vishay 备注：这里有IRF840多少钱，2024年最近7天走势，今日出价，今日竞价，IRF840批发/采购报价，IRF840行情走势销售排行榜，IRF840报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF840

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

Motorola
IRF840

PowerMOStransistorAvalancheenergyrated

DESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitched modepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF840issuppliedin

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRF840

N-CHANNEL500V-0.75ohm-8A-TO-220PowerMESH]MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF840

N-CHANNELPOWERMOSFETS

FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

Samsung
IRF840

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF840

N-ChannelPowerMOSFETs,8A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF840

8A,500V,0.850Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF840

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

500Volt,0.85OhmHEXFETTO-220ABPlasticPackage TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancelineofpowerMOSFETtransistors.TheefficientgemmetryanduniqueprocessingofthislatestStateoftheArtdesignachieves:verylowon-stateresistancecombinedwithhight

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840

TRANSISTORSN-CHANNEL

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSN-CHANNEL

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840

PowerMOSFET(VDSS=500V,RDS(on)=0.85ohm,ID=8.0A)

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

TEL
IRF840

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
IRF840

iscN-ChannelMosfetTransistor

Designedforhighvoltage,highspeedswitchingpowerapplicationssuchasswitchingregulators,converters,solenoidandrelay FEATURES 1.DrainCurrent–ID=8.0A@TC=25℃ 2.DrainSourceVoltage-:VDSS=500V(Min) 3.StaticDrain-SourceOn-Resistance:RDS(on)=0.8

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF840

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay
IRF840

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRF840

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF840

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-AC convertersandhighcurrenthighspeedswitchingcircuits.APECMOSFETprovidethepowerdesignerwiththebestcombinationoffasts

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER
IRF840

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF840areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI
IRF840

N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ●VGSRatedat±20V ●SiliconGateforFastSwitchingSpe

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF840

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
IRF840

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay
IRF840

A0.9-AConstantCurrentSupplywithPFCfor100-WLED

文件：436.08 Kbytes Page：17 Pages

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1
IRF840

N-ChannelMosfetTransistor

文件：71.91 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF840

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF840

PowerMOSFET

文件：2.66616 Mbytes Page：7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF8401111

TRANSISTORSN-CHANNEL

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSN-CHANNEL

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840A

PowerMOSFET(Vdss=500V,Rds(on)max=0.85ohm,Id=8.0A)

HEXFET®PowerMOSFET VDSSRds(on)maxID 500V0.85Ω8.0A Applications lSwitchModePowerSupply(SMPS) lUninterruptablePowerSupply lHighspeedpowerswitching Benefits lLowGateChargeQgresultsinSimpleDriveRequirement lImprovedG

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840A

PowerMOSFET

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

TEL
IRF840A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840A

UninterruptablePowerSupply

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand Avalanche

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF840AL

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww

VishayVishay Siliconix

威世科技

Vishay
IRF840AL

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840AL

PowerMOSFET

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

TEL
IRF840AL

PowerMOSFET(Vdss=500V,Rds(on)max=0.85ohm,Id=8.0A)

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching Benefits ●LowGateChargeQgResultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVo

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840ALPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840APBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840AS

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840AS

PowerMOSFET

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

TEL
IRF840AS

PowerMOSFET(Vdss=500V,Rds(on)max=0.85ohm,Id=8.0A)

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching Benefits ●LowGateChargeQgResultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVo

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840AS

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww

VishayVishay Siliconix

威世科技

Vishay
IRF840AS_V01

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww

VishayVishay Siliconix

威世科技

Vishay
IRF840ASPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840ASTRL

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840ASTRLPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840ASTRR

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840ASTRRPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF840B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF840FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF840FP

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRF840LC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技

Vishay
IRF840LCL

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

Vishay
IRF840LCL

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840LCL

PowerMOSFET

FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技

Vishay
IRF840LCL

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

Vishay
IRF840LCLPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

Vishay
IRF840LCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技

Vishay
IRF840LCS

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

Vishay
IRF840LCS

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

Vishay
IRF840LCS

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF840LCS

PowerMOSFET

FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技

Vishay

IRF840产品属性

  • 类型

    描述

  • 型号

    IRF840

  • 功能描述

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF840供应商更多...

更新时间：2024-4-26 23:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市晴轩时代电子有限公司
IRF840B
IR
21+
TO220
10644
公司只做原装正品
询价
深圳市凌旭科技有限公司
IRF840
VISHAY
2016+
TO220
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
IRF840
IR
23+
FAX : 6564815466
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
IRF840ASTRRPBF
VISHAY/威世
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市纳立科技有限公司
IRF840PBF
VISH
三年内
1983
纳立只做原装正品13590203865
询价
深圳市高捷芯城科技有限公司
IRF840SPBF
VISHAY(威世)
23+
TO263
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
中天科工半导体（深圳）有限公司
IRF840LCSTRRPBF
Vishay Siliconix
23+
D2PAK(TO-263)
30000
晶体管-分立半导体产品-原装正品
询价
深圳市明嘉莱科技有限公司
IRF840(IR)
IR
1994+
NA
880000
明嘉莱只做原装正品现货
询价
深圳市金芯世纪电子有限公司
IRF840BPBF
VISHAY/威世
22+
TO-220AB
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
IRF840ALPBF
Vishay(威世)
23+
标准封装
9048
原厂直销,大量现货库存,交期快。价格优,支持账期
询价

IRF840芯片相关品牌

  • ABLIC
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  • ILLINOISCAPACITOR
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  • MSYSTEM
  • SSDI
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