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位置：首页 > IC中文资料第1981页 > IRF720

IRF720价格

参考价格：￥12.5883

型号：IRF720 品牌：Vishay 备注：这里有IRF720多少钱，2024年最近7天走势，今日出价，今日竞价，IRF720批发/采购报价，IRF720行情走势销售排行榜，IRF720报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF720

N-CHANNELPOWERMOSFETS

FEATURES •LowerRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

Samsung
IRF720

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF720

TRANSISTORSN-CHANNEL

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFET®technologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistor. FEATURES: ■RepetitiveAvalancheRatings ■Dynamicdv/dtRatings ■SimpleDriveRequirement ■EaseofParalleling

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF720

3.3A,400V,1.800Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF720

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技

Vishay
IRF720

iscN-ChannelMOSFETTransistor

DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF720

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,veryfastswitching,easeofparallelingandtemperaturestabilityoftheelectricalparameters. Theyarewellsuitedforapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF720

N-ChannelPowerMOSFETs

文件：333.66 Kbytes Page：6 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF720

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF720

N-channelenhancementmodepowermostransistors

文件：343.23 Kbytes Page：6 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF7201

HEXFETPowerMOSFET

Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETMOSFETsarewellknownfo

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7201PBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETMOSFETsarewellknownfo

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7201TR

GenerationVTechnology

Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETMOSFETsarewellknownfo

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7204

PowerMOSFET(Vdss=-20V,Rds(on)=0.060ohm,Id=-5.3A)

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7204PBF

HEXFET짰PowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7204TR

-30VP-ChannelEnhancementModeMOSFET

Features: RDS(ON)

UMWUMW

友台友台半导体

UMW
IRF7205

HEXFETPowerMOSFET

Features •AdavancedProcessTechnology •UltraLowOn-Resistance •P-ChannelMOSFET •SurfaceMount •Dynamicdv/dtRating •FastSwitching

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
IRF7205

HEXFETPowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7205

P-ChannelMOSFET

Features •AdavancedProcessTechnology •UltraLowOn-Resistance •P-ChannelMOSFET •SurfaceMount •Dynamicdv/dtRating •FastSwitching

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
IRF7205PBF

AdavancedProcessTechnology

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7205PBF

HEXFETPowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7205TRPBF

AdavancedProcessTechnology

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7207

HEXFETPowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7207

Generation5Technology

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7207PBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7207TR

Generation5Technology

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF720A

AdvancedPowerMOSFET(400V,1.8ohm,3.3A)

AdvancedPowerMOSFET(400V,1.8ohm,3.3A) FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowerRDS(ON):1.408Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF720B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF720L

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay
IRF720PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技

Vishay
IRF720S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay
IRF720S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技

Vishay
IRF720S_V01

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay
IRF720SPBF

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=1.8廓,ID=3.3A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •RepetitiveAvalanch

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7201

UltraLowOn-Resistance

文件：644.03 Kbytes Page：7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF7201PBF

GenerationVTechnology

文件：179.34 Kbytes Page：7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7201PBF_15

GenerationVTechnology

文件：179.34 Kbytes Page：7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7201TRPBF

GenerationVTechnology

文件：179.34 Kbytes Page：7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7204PBF

ADVANCEDPROCESSTECHNOLOGY

文件：249.27 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7204PBF_15

ADVANCEDPROCESSTECHNOLOGY

文件：249.27 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7204TRPBF

AdavancedProcessTechnology

文件：249.27 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7204TRPBF

P-Channel20-V(D-S)MOSFET

文件：2.01837 Mbytes Page：9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7205PBF

ULTRALOWONRESISTANCE

文件：278.95 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7205PBF_15

ULTRALOWONRESISTANCE

文件：278.95 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7205PBF-1

Industry-standardpinoutSO-8Package

文件：279.5 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7205PBF-1_15

Industry-standardpinoutSO-8Package

文件：279.5 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7205TRPBF

P-Channel30-V(D-S)MOSFET

文件：1.08239 Mbytes Page：8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7207TRPBF

Generation5Technology

文件：177.2 Kbytes Page：7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF720A

N-ChannelMosfetTransistor

文件：203.67 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF720FI

iscN-ChannelMOSFETTransistor

文件：64.33 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF720FI

N-channelenhancementmodepowermostransistors

文件：343.23 Kbytes Page：6 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF720LPBF

PowerMOSFET

文件：255.7 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF720SPBF

PowerMOSFET

文件：255.7 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF720STRR

HEXFETPOWERMOSFET

文件：372.09 Kbytes Page：8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF720STRRPBFA

PowerMOSFET

文件：255.7 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

Vishay
720

WILMAR??ProtectiveRelays-700Series

SeveraltypesofReversePowerRelaysareavailableincludingrelayssensitivetoreversereactivepower(KVAR).WILMARistheleadingbrandofreversepowerrelays.Ourruggedsealedconstructionprovidescontinuousandreliableoperationunaffectedbyshock,vibrationorothersevereenvironmen

MACOM

Tyco Electronics

MACOM
720

PUSHBUTTONSWITCHES

文件：105.21 Kbytes Page：1 Pages

E-SWITCH

E-Switch, Inc.

E-SWITCH
720

TripodMountingLug

文件：96.88 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
720

WihaQualityToolsSlottedBits

文件：303.45 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
720

WihaSockets

文件：170.71 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

IRF720产品属性

  • 类型

    描述

  • 型号

    IRF720

  • 功能描述

    MOSFET N-Chan 400V 3.0 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF720供应商更多...

更新时间：2024-5-13 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
IRF7201
IR
2016+
SOP8
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
IRF7205TRPBF
INFINEON
23+
K-B
4000
只有原装,请来电咨询
询价
深圳市纳艾斯科技有限公司
IRF720STRRPBF
VISHAY/威世
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
中天科工半导体（深圳）有限公司
IRF7201TR
IR
23+
SOP-8
45000
热卖优势现货
询价
深圳市金芯世纪电子有限公司
IRF7205TRPBF
INFINEON/英飞凌
22+
SOIC8
100000
代理渠道/只做原装/可含税
询价
深圳市威雅利发展有限公司
IRF720PBF
IR
06+;19+;18+;15+
TO-220
7218
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市益百分电子有限公司
IRF7205
99+
SOP8
2255
全新原装进口自己库存优势
询价
华富测量(深圳)传感技术有限公司
IRF7204
IR
2138+
原厂标准封装
8960
专营军工产品,进口原装
询价
深圳市纳睿斯电子科技有限公司
IRF7201PBF
Infineon Technologies
30000
原装现货,支持实单
询价
深圳市品优时代科技有限公司
IRF7205TRPBF
INFINEON/IR
1907+
NA
4000
20年老字号,原装优势长期供货
询价

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