位置：首页 > IC中文资料第2126页 > IRF6691TR
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HEXFETPowerMOSFETplusSchottkyDiode HEXFETPowerMOSFETplusSchottkyDiode ●ApplicationSpecificMOSFETs ●IntegratesMonolithicTrenchSchottkyDiode ●IdealforCPUCoreDC-DCConverters ●LowConductionLosses ●LowReverseRecoveryLosses ●LowSwitchingLosses ●LowReverseRecoveryChargeandLowVf ●LowProfile( | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
RoHsCompliant Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
RoHsCompliant Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
DirectFETPowerMOSFET Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
DirectFETPowerMOSFET Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
RoHsCompliant Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SystemDCPowerSupply 文件：318.82 Kbytes Page：5 Pages | KEYSIGHTKeysight Technologies 德科技（中国德科技（中国）有限公司 |  | |
IRF6691TR产品属性
- 类型
描述
- 型号
IRF6691TR
- 功能描述
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/INFINEON |
22+21+ |
QFN |
3800 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
IRVISHAY |
22+ |
NA |
35000 |
全新原装正品现货 |
|||
23+ |
N/A |
36100 |
正品授权货源可靠 |
||||
IR |
23+ |
QFN |
1009 |
优势库存 |
|||
IR |
23+ |
NA/ |
892 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
22+23+ |
QFN |
14950 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
|||
IR |
17+ |
QFN |
6200 |
100%原装正品现货 |
|||
IOR |
23+ |
DIRECTFE |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
2024+原装现货 |
DIRECTFET |
8950 |
BOM配单专家,发货快,价格低 |
IRF6691TR芯片相关品牌
IRF6691TR规格书下载地址
IRF6691TR参数引脚图相关
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IRF6691TR数据表相关新闻
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