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IRF6618TRPBF价格
参考价格：￥14.9066
型号：IRF6618TRPBF 品牌：International 备注：这里有IRF6618TRPBF多少钱，2024年最近7天走势，今日出价，今日竞价，IRF6618TRPBF批发/采购报价，IRF6618TRPBF行情走势销售排行榜，IRF6618TRPBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6618TRPBF | DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRF6618TRPBF | IdealforCPUCoreDC-DCConverters 文件：250.25 Kbytes Page：9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 |  | | |
DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl | STANFORDStanford Microdevices Stanford Microdevices |  | | |
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 |  | | |
LowOn-resistance,FastSwitchingCharacteristic 文件：100.58 Kbytes Page：4 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 |  | | |
HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule 文件：872.94 Kbytes Page：10 Pages | ANADIGICS ANADIGICS |  | |
IRF6618TRPBF产品属性
- 类型
描述
- 型号
IRF6618TRPBF
- 功能描述
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
1802+ |
QFN |
6528 |
只做原装正品现货,或订货假一赔十! |
|||
IR |
22+ |
QFN |
12245 |
现货,原厂原装假一罚十! |
|||
IR |
21+ |
QFN |
1709 |
||||
INFINEON/英飞凌 |
2021+ |
72000 |
十年专营原装现货,假一赔十 |
||||
INFINEON/英飞凌 |
19+ |
QFN |
9000 |
正规报关原装现货系列订货技术支持 |
|||
Infineon Technologies |
24+ |
DIRECTFET? MT |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
24+ |
QFN |
160821 |
明嘉莱只做原装正品现货 |
|||
Infineon Technologies |
21+ |
DirectFET? Isometric MT |
13880 |
公司只售原装,支持实单 |
|||
IR |
23+ |
QFN |
30000 |
原装现货,假一赔十. |
IRF6618TRPBF芯片相关品牌
IRF6618TRPBF规格书下载地址
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2019-3-25
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