位置：首页 > IC中文资料第860页 > IRF634N
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF634N | PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRF634N | PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 |  | |
PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
T-1SubminiatureLamps T-1¼SubminiatureLamps | GILWAY Gilway Technical Lamp |  | | |
634MSeriesD-SubConnectors|MachinedPins|HighDensityThreeContactRowswith0.350(8.89mm)FootprintRightAngleBend|Receptacle Features HighDensityThreeContactRowswith.350(8.89mm)FootprintRightAngleBendwithMachinedContacts .090(2.29mm)ContactSpacing0.078(1.98mm)RowSpacing PlugandReceptaclein15,26,44or62ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination M | EDACEDAC, All Rights Reserved. 亚得电子亚得电子（东莞）有限公司 |  | | |
20VComplementaryEnhancementModeFieldEffectTransistor Description TheACE634combinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. Features •N-Channel VDS(V)=20V ID=4A RDS(ON) | ACE ACE Technology Co., LTD. |  | | |
LowFrequencies 文件：141.01 Kbytes Page：2 Pages | OSCILENT Oscilent Corporation |  | | |
DCaxialfans 文件：249.79 Kbytes Page：1 Pages | EBMPAPST ebm-papst |  | |
IRF634N产品属性
- 类型
描述
- 型号
IRF634N
- 功能描述
MOSFET N-Chan 250V 8.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT223 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
IR |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
|||
原装正品 |
23+ |
TO-220 |
55005 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
IR |
20+ |
TO-220 |
90000 |
全新原装正品/库存充足 |
|||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
INFINEON |
2023 |
5000 |
公司原装现货/支持实单 |
||||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IR/VISHAY |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
IRF634N芯片相关品牌
IRF634N规格书下载地址
IRF634N参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRF645
- IRF644S
- IRF644N
- IRF644B
- IRF644A
- IRF644
- IRF643
- IRF642
- IRF641
- IRF640T
- IRF640S
- IRF640N
- IRF640L
- IRF640B
- IRF640A
- IRF640_R4941
- IRF640/D
- IRF640,127
- IRF640
- IRF637
- IRF636
- IRF635
- IRF634STRRPBF
- IRF634STRR
- IRF634STRLPBF
- IRF634STRL
- IRF634SPBF
- IRF634S
- IRF634PBF
- IRF634NSTRRPBF
- IRF634NSTRLPBF
- IRF634NSPBF
- IRF634NS
- IRF634NPBF
- IRF634NLPBF
- IRF634NL
- IRF634L
- IRF634FP
- IRF634B_FP001
- IRF634B
- IRF634A
- IRF-634
- IRF634
- IRF633
- IRF632R
- IRF632
- IRF631R
- IRF63193
- IRF631
- IRF630STRRPBF
- IRF630STRR
- IRF630STRLPBF
- IRF630STRL
- IRF630ST4
- IRF630SPBF
- IRF630S
- IRF630R
- IRF630N
- IRF630M
- IRF630F
- IRF630B
- IRF630A
- IRF630
- IRF627
- IRF626
- IRF625
- IRF624S
- IRF624B
- IRF624A
IRF634N数据表相关新闻
IRF640NPBF 原装正品
品牌IR现货300K
2022-7-5IRF640NPBF原装现货
IRF640NPBF原装正品
2021-8-9IRF5803TRPBF场效应管
IRF5803TRPBF场效应管
2021-3-24IRF6712STRPBF公司大量全新原装现货/长期供应！
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-27IRF630N
原装正品现货价格优惠
2019-3-25IRF630N
IRF630N
2019-3-25
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
