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IRF3710价格
参考价格:¥6.3669
型号:IRF3710LPBF 品牌:International 备注:这里有IRF3710多少钱,2024年最近7天走势,今日出价,今日竞价,IRF3710批发/采购报价,IRF3710行情走势销售排行榜,IRF3710报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF3710 | PowerMOSFET(Vdss=100V,Rds(on)=23mohm,Id=57A) VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF3710 | N-ChannelPowerMOSFET 文件:346.96 Kbytes Page:7 Pages | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | ||
IRF3710 | AdvancedProcessTechnology 文件:715.62 Kbytes Page:8 Pages | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRF3710 | N-ChannelPowerMOSFET(100V/59A) 文件:280.15 Kbytes Page:2 Pages | FS First Silicon Co., Ltd | ||
IRF3710 | iscN-ChannelMosfetTransistor 文件:65.319 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A) VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A) VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A) VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A) VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology VDSS=100V RDS(on)=18mΩ ID=59A Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor 文件:338.78 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
IscN-ChannelMOSFETTransistor 文件:300.38 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
57A,100VHeatsinkPlanarN-ChannelPowerMOSFET 文件:1.6614 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
AdvancedProcessTechnology 文件:224.46 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:189.08 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:309.51 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnologyUltraLowOn-Resistance 文件:4.63191 Mbytes Page:12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
N-ChannelMOSFETTransistor 文件:339.41 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
IscN-ChannelMOSFETTransistor 文件:301.06 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnologyUltraLowOn-Resistance 文件:4.63191 Mbytes Page:12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
AdvancedProcessTechnology 文件:387.76 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:387.76 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:189.74 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnologyUltraLowOn-Resistance 文件:4.63191 Mbytes Page:12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
LOWPOWERPWMCONTROLLERFOROFF-LINEADAPTER GeneralDescription TheAP3710isagreen-modePWMcontroller,itsmainapplicationsarelowpowersuppliessuchasofflinebatterychargers,adapters,STBandotherauxiliarysupplies,wheretheneedsforlownoloadpower,lowtotalcostandhighreliabilityareallrequired. Features | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | |||
GeneralPurposePackagingTape 文件:14.65 Kbytes Page:2 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | |||
Nytye®MountingPlatforms 文件:241.29 Kbytes Page:1 Pages | Heyco Heyco | |||
SecondarySideSynchronousPostRegulator 文件:226.91 Kbytes Page:12 Pages | LINERLinear Technology 线性技术公司 | |||
59A100VN-CHANNELPOWERMOSFETTRANSISTOR 文件:278.19 Kbytes Page:7 Pages | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 |
IRF3710产品属性
- 类型
描述
- 型号
IRF3710
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
06+ |
TO-220 |
10000 |
自己公司全新库存绝对有货 |
|||
23+ |
N/A |
90150 |
正品授权货源可靠 |
||||
IR |
1923+ |
TP-220 |
80000 |
原装正品有现货欢迎看货 |
|||
IR |
23+ |
TO-220 |
26371 |
保证进口原装现货假一赔十 |
|||
IOR |
2016+ |
TO220 |
6523 |
只做进口原装现货!假一赔十! |
|||
IR |
0725+ |
TO220 |
23615 |
进口原管现货 |
|||
Infineon |
19+ |
TO-263 |
30000 |
||||
IR |
16+ |
TO220 |
3786 |
一片起订!原装低价支持实单! |
|||
IR |
22+ |
TO-220 |
5000 |
全新原装现货!自家库存! |
|||
Infineon Technologies |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
IRF3710规格书下载地址
IRF3710参数引脚图相关
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IRF3710数据表相关新闻
IRF520NPBF
全新原装现货支持第三方机构验证
2022-10-19IRF3710STRLPBF 原装正品
INFINEON/英飞凌现货100K
2022-7-6IRF3205ZSTRLPBF
IRF3205ZSTRLPBF
2022-4-26IRF3205PBF原装现货
IRF3205PBF原装正品
2021-8-10IRF3710PBF原装现货
IRF3710PBF原装正品
2021-8-9IRF3205PBF公司大量原装现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-28
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